首頁 >MGF4953AIC>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SUPERLOWNOISEInGaAsHEMTLeadlessCeramicPackage DESCRIPTION TheMGF4953Bsuper-lownoiseHEMT(HighElectronMobilityTransistor)isdesignedforuseinKbandamplifiers. Thelead-lessceramicpackageassuresminimumparasiticlosses. FEATURES Lownoisefigure@f=20GHz NFmin.=0.55dB(Typ.) Highassociatedgain@f=20GHz | MitsubishiMitsubishi Electric Semiconductor 三菱電機三菱電機株式會社 | Mitsubishi | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
-30V(D-S)DualP-ChannelEnhancementModePowerMOSFET | MORESEMIMORE Semiconductor Company Limited 摩矽半導體摩矽半導體有限公司 | MORESEMI | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
NCEP-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
NCEP-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
SurgeClamping,TransientOvervoltageSuppressorBidirectional Description: TheNTE4900seriesofsiliconTransientSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighenergyvoltagetransients.Transientovervoltagesuppressordeviceshavebecomeveryimportantasaconsequenceoftheirhighsurgecapability,extremelyfastresponsetime | NTE NTE Electronics | NTE | ||
RFConnectorsTechnicalDataSheet | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
P-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
DualP-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
P-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 銳駿半導體深圳銳駿半導體股份有限公司 | RUICHIPS | ||
P-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 銳駿半導體深圳銳駿半導體股份有限公司 | RUICHIPS | ||
T1/CEPT/ISDN-PRITRANSFORMER | BOTHHAND Bothhand USA | BOTHHAND | ||
DualP-ChannelEnhancementModeFieldEffectTransistor Features SurfaceMountPackage. SuperhighdensecelldesignforlowRDS(ON). Ruggedandreliable. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
MITSUBI |
23+ |
QFN-4 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
MITSUBI |
24+ |
QFN-4 |
1203 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
MITSUBI |
2022 |
QFN-4 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
MITSUBI |
22+ |
QFN-4 |
354000 |
詢價 | |||
MITSUBISHI/三菱 |
19+ |
4pinflatlead |
1000 |
進口原裝現(xiàn)貨假一賠萬力挺實單 |
詢價 | ||
MITSUBISHI/三菱 |
22+ |
SMD |
34137 |
只做原裝進口現(xiàn)貨 |
詢價 | ||
MITSUBI |
2020+ |
QFN4 |
15268 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
MITSUBISHI |
2017+ |
SMD |
1585 |
只做原裝正品假一賠十! |
詢價 | ||
24+ |
QFN |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | |||
MITSUBISHI |
1708+ |
? |
6500 |
只做原裝進口,假一罰十 |
詢價 |
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