MGW12N120中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
MGW12N120規(guī)格書詳情
Insulated Gate Bipolar Transistor
???????N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies.
? Industry Standard High Power TO–247 Package with Isolated Mounting Hole
? High Speed Eoff: 160 J/A typical at 125°C
? High Short Circuit Capability – 10 s minimum
? Robust High Voltage Termination
產(chǎn)品屬性
- 型號(hào)：
MGW12N120
- 制造商：
ON Semiconductor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
56000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
ON |
23+ |
TO-247 |
239 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
COSEL |
13+ |
1333 |
原裝分銷 |
詢價(jià) | |||
ON(安森美) |
23+ |
NA/ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
ON/安森美 |
24+ |
N/A |
5000 |
只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ON/安森美 |
22+ |
TO |
94523 |
詢價(jià) | |||
COSEL |
23 |
DIP |
55000 |
原廠渠道原裝正品假一賠十 |
詢價(jià) | ||
COSEL |
NA |
355 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
ON |
TO-247 |
699839 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
ON/安森美 |
23+ |
NA |
25630 |
原裝正品 |
詢價(jià) |
