MGY30N60D中文資料Motorola數(shù)據(jù)手冊(cè)PDF規(guī)格書
MGY30N60D規(guī)格書詳情
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.
? Industry Standard High Power TO–264 Package (TO–3PBL)
? High Speed Eoff: 60 μJ per Amp typical at 125°C
? High Short Circuit Capability – 10 μs minimum
? Soft Recovery Free Wheeling Diode is included in the package
? Robust High Voltage Termination
? Robust RBSOA
產(chǎn)品屬性
- 型號(hào)：
MGY30N60D
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
ON Semiconductor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MICROGATE |
24+ |
SMD |
90000 |
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理 |
詢價(jià) | ||
普德新星 |
23+ |
MODULE |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
24+ |
N/A |
69000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
AMOTEC |
24+ |
06 03 |
608900 |
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126 |
詢價(jià) | ||
ON/安森美 |
24+ |
NA |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ON/安森美 |
23+ |
98000 |
詢價(jià) | ||||
麥科 |
22+23+ |
0402 |
56659 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
24+ |
N/A |
1850 |
詢價(jià) | ||||
ON/安森美 |
標(biāo)準(zhǔn)封裝 |
57598 |
一級(jí)代理原裝正品現(xiàn)貨期貨均可訂購 |
詢價(jià) | |||
TDK/東電化 |
2022+ |
0603 |
4000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) |
