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MH2201WZ

1200V 25A Fast Recovery Diode

lFeatures 1)LightPunchThroughType 2)LowForwardVoltage 3)VeryFast&SoftRecovery 4)LowRecoveryLoss lApplication FreeWheeling

ROHMRohm

羅姆羅姆半導體集團

MH2205WZ

1200V 50A Fast Recovery Diode

Features 1)LightPunchThroughType 2)LowForwardVoltage 3)VeryFast&SoftRecovery 4)LowRecoveryLoss Application FreeWheeling forIndustrialUse

ROHMRohm

羅姆羅姆半導體集團

MH2206WZ

1200V 75A Fast Recovery Diode

Features 1)LightPunchThroughType 2)LowForwardVoltage 3)VeryFast&SoftRecovery 4)LowRecoveryLoss Application FreeWheeling forIndustrialUse

ROHMRohm

羅姆羅姆半導體集團

MH2207WZ

1200V 100A Fast Recovery Diode

Features 1)LightPunchThroughType 2)LowForwardVoltage 3)VeryFast&SoftRecovery 4)LowRecoveryLoss Application FreeWheeling forIndustrialUse

ROHMRohm

羅姆羅姆半導體集團

MH2208WZ

1200V 150A Fast Recovery Diode

Features 1)LightPunchThroughType 2)LowForwardVoltage 3)VeryFast&SoftRecovery 4)LowRecoveryLoss Application FreeWheeling forIndustrialUse

ROHMRohm

羅姆羅姆半導體集團

MH2209WZ

1200V 200A Fast Recovery Diode

Features 1)LightPunchThroughType 2)LowForwardVoltage 3)VeryFast&SoftRecovery 4)LowRecoveryLoss Application FreeWheeling forIndustrialUse

ROHMRohm

羅姆羅姆半導體集團

MH25

High Voltage Metal Film Resistor

MHSeries ?Valueupto2M2 ?Highstabilitymetalfilm ?Highworkingvoltageto3.5kV

IRCTT

IRC - a TT electronics Company.

MH28D72KLG-10

9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module

DESCRIPTION TheMH28D72KLGis134217728-wordx72-bitDoubleDataRate(DDR)SynchronousDRAMmountedmodule. Thisconsistsof36industrystandard64Mx4DDRSynchronousDRAMsinTSOPwithSSTL_2interfacewhichachievesveryhighspeeddatarateupto133MHz. Thissocket-typememorymodule

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

MH28D72KLG-75

9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module

DESCRIPTION TheMH28D72KLGis134217728-wordx72-bitDoubleDataRate(DDR)SynchronousDRAMmountedmodule. Thisconsistsof36industrystandard64Mx4DDRSynchronousDRAMsinTSOPwithSSTL_2interfacewhichachievesveryhighspeeddatarateupto133MHz. Thissocket-typememorymodule

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

MH28S72PJG-5

9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

DESCRIPTION TheMH28S72PJGis134,217,728-wordx72-bitSynchronousDRAMstackedstructuralmodule.Thisconsistofthirty-sixindustrystandard64Mx4SynchronousDRAMsinTSOP. ThestackedstructureofTSOPonacardedgedualinlinepackageprovidesanyapplicationwherehighdensities

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

詳細參數

  • 型號：

    MH2

  • 制造商：

    ABC

  • 制造商全稱：

    ABC Taiwan Electronics Corp

  • 功能描述：

    MULTILAYER CHIP INDUCTOR

供應商型號品牌批號封裝庫存備注價格
MH
36118
SOT23-5
2015
專業(yè)代理鋰電充電管理IC,型號齊全,公司優(yōu)勢產品
 詢價
24+
139435
詢價
TriQuint
24+
SOP8
5000
全現原裝公司現貨
 詢價
BOURNS
23+
SMD被動器件正邁科技
99050
電容電阻被動器件電感磁珠系列樣品可出支持批量QQ
 詢價
Bourns
1718+
SMD
9300
只做原裝進口,假一罰十
 詢價
BOURNS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
WJ
24+
SMD
5000
WJ專營品牌絕對進口原裝假一賠十
 詢價
TRIQUINTS
23+
NA
273
專做原裝正品,假一罰百!
 詢價
TriQuin
25+23+
SOP8
28199
絕對原裝正品全新進口深圳現貨
 詢價
BOURNS
18+
SMD
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
更多MH2供應商 更新時間2025-4-6 9:00:00

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