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MID122

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlowspeedswitchingapplications.

DCCOM

Dc Components

MJD122

ComplementaryDarlingtonPowerTransistors

Features ?D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications ?ElectricallySimilartoPopularTIP122 ?ComplementtoMJD127

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD122

ComplementaryDarlingtonPowerTransistors

Features ?D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications ?ElectricallySimilartoPopularTIP122 ?ComplementtoMJD127

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD122

SILICONPOWERTRANSISTORS8AMPERES100VOLTS20WATT

Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?StraightLeadVersioninPlasticSleeves(“–1”Suffix) ?LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) ?Sur

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJD122

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD122

ComplementaryDarlingtonPowerTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD122

LowvoltagepowerDarlingtontransistor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD122

SiliconNPNepitaxialplanerTransistors

Features ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?HalogenFreeAvailableUponRequestByAddingSuffix-HF ?MoistureSensitivityLevel1 ?EpoxyMeetsUL94V-0FlammabilityRating ?LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MJD122

TECHNICALSPECIFICATIONSOFNPNDARLINGTONTRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlowspeedswitchingapplications.

DCCOM

Dc Components

MJD122

NPNPLASTICENCAPSULATETRANSISTORS

Features: *HighDCcurrentgain *ElectricallysimilartopopularTIP122 *Built-inadamperdiodeatE-C

WEITRON

Weitron Technology

詳細(xì)參數(shù)

  • 型號(hào)：

    MID122

  • 制造商：

    DCCOM

  • 制造商全稱：

    Dc Components

  • 功能描述：

    TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
OptiFuse
23+
6000
誠(chéng)信服務(wù)，絕對(duì)原裝原盤
 詢價(jià)
UNI
13+
19728
原裝分銷
 詢價(jià)
UNI原裝
1801+
DIP-2
8965
只做原裝現(xiàn)貨、主營(yíng)光電元器件/門市現(xiàn)貨
 詢價(jià)
UNI
24+
DIP-2
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
UNI
2315+
4860
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢價(jià)
UNI
23+
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
IXYS
22+
Y4M5
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IXYS
23+
Y4M5
9000
原裝正品，支持實(shí)單
 詢價(jià)
IXYS
23+
MODIGBTRBSOA1200V160AY4-
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
更多MID122供應(yīng)商 更新時(shí)間2025-2-2 18:30:00

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