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MJ11028

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighGainDarlingtonPerformance ?HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJ11028

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A(Pulsed) ?

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJ11028

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES ?HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A ?CURVESTO100A(Pulsed) ?DIODEPROTECTIONTORATEDIC ?MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR ?JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

SEME-LAB

Seme LAB

MJ11028

High-Current Complementary Silicon Power Transistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc ?Curvesto100A(P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJ11028

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High?CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain?hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11028

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11028

isc Silicon NPN Darlington Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJ11028

High??urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11028_05

High??urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11028_08

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11028G

High??urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11028G

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11028G

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-204AE 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS NPN DARL 60V 50A TO204

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

晶體管資料

  • 型號:

    MJ11028

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質(zhì):

    開關(guān)管 (S)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    50A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號:

  • 最大耗散功率:

    300W

  • 放大倍數(shù):

    β>1000

  • 圖片代號:

    E-44

  • vtest:

    60

  • htest:

    999900

  • atest:

    50

  • wtest:

    300

詳細(xì)參數(shù)

  • 型號:

    MJ11028

  • 功能描述:

    達(dá)林頓晶體管 50A 60V Bipolar

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶體管極性:

    NPN 集電極—發(fā)射極最大電壓

  • VCEO:

    50 V 發(fā)射極 - 基極電壓

  • VEBO:

    集電極—基極電壓

  • 最大直流電集電極電流:

    0.5 A

  • 最大工作溫度:

    + 150 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-18

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
MOT
24+
N/A
5890
詢價
2016+
TO-263
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費(fèi)送樣品!
詢價
MOT/ON
16+
TO-3
500
原裝現(xiàn)貨假一罰十
詢價
MOT
23+
TO-3
5000
原裝正品,假一罰十
詢價
ISC
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
MOT/ON
專業(yè)鐵帽
TO-3
500
原裝鐵帽專營,代理渠道量大可訂貨
詢價
MOT/ON
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
詢價
MOTOROLA/摩托羅拉
23+
TO3
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
MOT
23+
TO3
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
BZD
24+
TO-263
9
原裝現(xiàn)貨假一賠十
詢價
更多MJ11028供應(yīng)商 更新時間2024-12-23 16:00:00