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MJ11029

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A(Pulsed) ?

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJ11029

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High?CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain?hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11029

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighGainDarlingtonPerformance ?HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJ11029

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES ?HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A ?CURVESTO100A(Pulsed) ?DIODEPROTECTIONTORATEDIC ?MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR ?JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

SEME-LAB

Seme LAB

MJ11029

High-Current Complementary Silicon Power Transistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc ?Curvesto100A(P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJ11029

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage :V(BR)CEO=-60V(Min.) ?HighDCCurrentGain- :hFE=1000(Min.)@IC=-25A :hFE=400(Min.)@IC=-50A ?ComplementtoTypeMJ11028 APPLICATIONS ?Designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplic

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJ11029

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11029

High??urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11029G

High??urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11029G

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PS11029

PatchLead-CAT5E

PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

晶體管資料

  • 型號(hào):

    MJ11029

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+Darl+Di

  • 性質(zhì):

    開關(guān)管 (S)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    50A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號(hào):

  • 最大耗散功率:

    300W

  • 放大倍數(shù):

    β>1000

  • 圖片代號(hào):

    E-44

  • vtest:

    60

  • htest:

    999900

  • atest:

    50

  • wtest:

    300

詳細(xì)參數(shù)

  • 型號(hào):

    MJ11029

  • 功能描述:

    達(dá)林頓晶體管 50A 60V Bipolar

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶體管極性:

    NPN 集電極—發(fā)射極最大電壓

  • VCEO:

    50 V 發(fā)射極 - 基極電壓

  • VEBO:

    集電極—基極電壓

  • 最大直流電集電極電流:

    0.5 A

  • 最大工作溫度:

    + 150 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-18

  • 封裝:

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MOTOROLA/摩托羅拉
24+
TO
14
只做原廠渠道 可追溯貨源
詢價(jià)
AN
2016+
原廠封裝
6528
只做原廠原裝現(xiàn)貨!終端客戶個(gè)別型號(hào)可以免費(fèi)送樣品!
詢價(jià)
MOT
24+
N/A
6980
詢價(jià)
MOT/ON
16+
TO-3
2500
原裝現(xiàn)貨假一罰十
詢價(jià)
ISC
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
ON
21+
TO-3
12588
原裝現(xiàn)貨價(jià)格優(yōu)勢(shì)
詢價(jià)
MOT/ON
專業(yè)鐵帽
TO-3
2500
原裝鐵帽專營,代理渠道量大可訂貨
詢價(jià)
MOT/ON
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號(hào)增稅票
詢價(jià)
ON
2020+
TO-3
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
MOT
23+
TO
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
詢價(jià)
更多MJ11029供應(yīng)商 更新時(shí)間2024-12-23 16:36:00