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MJ11029G

High??urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJ11029G

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

11029

PVCandNylonLEDSpacers

HeycoHeyco.

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MJ11029

High-CurrentComplementarySiliconPowerTransistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc ?Curvesto100A(P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MJ11029

High-CurrentComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJ11029

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage :V(BR)CEO=-60V(Min.) ?HighDCCurrentGain- :hFE=1000(Min.)@IC=-25A :hFE=400(Min.)@IC=-50A ?ComplementtoTypeMJ11028 APPLICATIONS ?Designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplic

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJ11029

High??urrentComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJ11029

COMPLEMENTARYDARLINGTONPOWERTRANSISTOR

FEATURES ?HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A ?CURVESTO100A(Pulsed) ?DIODEPROTECTIONTORATEDIC ?MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR ?JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

SEME-LAB

Seme LAB

MJ11029

POWERTRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighGainDarlingtonPerformance ?HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

MJ11029

COMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS

High?CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain?hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJ11029

50AMPERECOMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS60.120VOLTS300WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A(Pulsed) ?

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PS11029

PatchLead-CAT5E

PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

詳細參數(shù)

  • 型號：

    MJ11029G

  • 功能描述：

    達林頓晶體管 50A 60V Bipolar Power PNP

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 配置：

    Octal

  • 晶體管極性：

    NPN 集電極—發(fā)射極最大電壓

  • VCEO：

    50 V 發(fā)射極 - 基極電壓

  • VEBO：

    集電極—基極電壓

  • 最大直流電集電極電流：

    0.5 A

  • 最大工作溫度：

    + 150 C

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    SOIC-18

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
24+
N/A
52000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
OHMITE
23+
NA
2586
專做原裝正品,假一罰百!
 詢價
MOT
24+
N/A
2540
詢價
東芝
100
原裝現(xiàn)貨,價格優(yōu)惠
 詢價
MOT/ON
24+
TO-3
500
原裝現(xiàn)貨假一罰十
 詢價
MOT
23+
TO-3
5000
原裝正品,假一罰十
 詢價
ISC
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
MOT/ON
1822+
TO-3
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
MOT/ON
專業(yè)鐵帽
TO-3
500
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
更多MJ11029G供應(yīng)商 更新時間2025-1-11 17:34:00

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