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MJE3055TG

ComplementarySiliconPlasticPowerTransistors

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS?75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral?purposeamplifierandswitchingapplications. Features ?DCCurrentGainSpecifiedto10A ?HighCurrentGain?BandwidthProduct?fT=2.0MHz(Min

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE3055TNPN

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications

CDIL

Continental Device India Limited

MJF3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

MJF3055(NPN) MJF2955(PNP) COMPLEMENTARYSILICONPOWERTRANSISTORS10AMPERES90VOLTS,30WATTS Specificallydesignedforgeneralpurposeamplifierandswitchingapplications. Features ?IsolatedOvermoldPackage(1500VoltsRMSMin) ?ElectricallySimilartothePopular

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF3055

COMPLEMENTARYSILICONPOWERTRANSISTORS10AMPERES90VOLTS30WATTS

ComplementarySiliconPowerTransistors ...specificallydesignedforgeneralpurposeamplifierandswitchingapplications. ?IsolatedOvermoldPackage(1500VoltsRMSMin) ?ElectricallySimilartothePopularMJE3055TandMJE2955T ?Collector–EmitterSustainingVoltage—VCEO(sus)90Volts

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJF3055

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF3055G

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMFT3055E

MEDIUMPOWERTMOSFET1.7AMP60VOLTS

N–ChannelEnhancementMode SiliconGateTMOSE–FET?SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSMediumPowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdevicealsooffersadrain–to–sourcediodewithafastrecoverytime

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMFT3055E

N-ChannelTMOSE-FETPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMFT3055EL

MEDIUMPOWERLOGICLEVELTMOSFET1.5AMP60VOLTS

MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET? SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSpowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvoltagesoi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMFT3055V

TMOSPOWERFET1.7AMPERES60VOLTS

TMOSV?SOT-223forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

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ST
23+
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16900
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36900
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22+
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16900
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23+
TO220
13000
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19747
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3000
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原裝正品
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30000
十七年VIP會員,誠信經(jīng)營,一手貨源,原裝正品可零售!
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22+
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32500
鄭重承諾只做原裝進口貨
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更多MJE3055T(CHINA)供應(yīng)商 更新時間2025-1-27 16:32:00