零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MJL1302AG | 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
MJL1302AG | Complementary Bipolar Power Transistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
MJL1302AG | 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-264-3,TO-264AA 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS PNP 260V 15A TO264 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
15AMPERESCOMPLEMENTARYSILICONPOWERTRANSISTORS230VOLTS200WATTS | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ComplementaryNPN-PNPSiliconPowerBipolarTransistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ComplementaryNPN-PNPSiliconPowerBipolarTransistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscSiliconPNPPowerTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ComplementaryNPN-PNPSiliconPowerBipolarTransistors TheMJW3281AandMJW1302AarePowerBasepowertransistors forhighpoweraudio,diskheadpositionersandotherlinear applications. Features ?Designedfor100WAudioFrequency ?GainComplementary: GainLinearityfrom100mAto7A hFE=45(Min)@IC=8A ?LowHarmonicDistortion ? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
15AMPERESCOMPLEMENTARYSILICONPOWERTRANSISTORS230VOLTS200WATTS | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ComplementaryNPN-PNPSiliconPowerBipolarTransistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ComplementaryNPN-PNPSiliconPowerBipolarTransistors TheMJW3281AandMJW1302AarePowerBasepowertransistors forhighpoweraudio,diskheadpositionersandotherlinear applications. Features ?Designedfor100WAudioFrequency ?GainComplementary: GainLinearityfrom100mAto7A hFE=45(Min)@IC=8A ?LowHarmonicDistortion ? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ProtectionofLithiumIonBatteries(twocellsinseries) Outline ThisICisforprotectingalithiumionbatteryfromovercharging,excessdischarging,andovercurrent.Ifabnormalitiesoccurduringchargingandexcessvoltageisapplied,ithasafunctionthatturnsofftheexternalFETswitchwhenvoltageisappliedtoeachbatterybeyondaspecifi | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | ||
ProtectionofLithiumIonBatteries(twocellsinseries) Outline ThisICisforprotectingalithiumionbatteryfromovercharging,excessdischarging,andovercurrent.Ifabnormalitiesoccurduringchargingandexcessvoltageisapplied,ithasafunctionthatturnsofftheexternalFETswitchwhenvoltageisappliedtoeachbatterybeyondaspecifi | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | ||
ProtectionofLithiumIonBatteries(twocellsinseries) Outline ThisICisforprotectingalithiumionbatteryfromovercharging,excessdischarging,andovercurrent.Ifabnormalitiesoccurduringchargingandexcessvoltageisapplied,ithasafunctionthatturnsofftheexternalFETswitchwhenvoltageisappliedtoeachbatterybeyondaspecifi | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | ||
ProtectionofLithiumIonBatteries(twocellsinseries) Outline ThisICisforprotectingalithiumionbatteryfromovercharging,excessdischarging,andovercurrent.Ifabnormalitiesoccurduringchargingandexcessvoltageisapplied,ithasafunctionthatturnsofftheexternalFETswitchwhenvoltageisappliedtoeachbatterybeyondaspecifi | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | ||
AxialLeadedLEDLamps FEATURES ?Allplasticmoldtype ?Willfitinsmallspace ?Lowcurrentoperation | Marktech Marktech Corporate | Marktech | ||
AxialLeadedLEDLamps FEATURES ?Allplasticmoldtype ?Willfitinsmallspace ?Lowcurrentoperation | Marktech Marktech Corporate | Marktech | ||
MarktechAxialLeadedLensedVersionLEDs FEATURES ?Allplasticmoldtype ?Willfitinsmallspace ?Lowcurrentoperation | Marktech Marktech Corporate | Marktech | ||
TMOSPOWERFET20AMPERES30VOLTS HDTMOSE-FETHighDensityPowerFETdpakforSurfaceMount N-ChannelEnhancementModeSiliconGate ThisadvancedHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSPOWERFET42AMPERES30VOLTSRDS(on)=22mohm ThisadvancedhighcelldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplie | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
MJL1302AG
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 晶體管類型:
PNP
- 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):
3V @ 1A,10A
- 電流 - 集電極截止(最大值):
50μA(ICBO)
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):
75 @ 5A,5V
- 頻率 - 躍遷:
30MHz
- 工作溫度:
-65°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-264-3,TO-264AA
- 供應(yīng)商器件封裝:
TO-264
- 描述:
TRANS PNP 260V 15A TO264
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
TO-264-3 |
924 |
原廠訂貨渠道,支持BOM配單一站式服務(wù) |
詢價(jià) | ||
onsemi |
24+ |
TO-264-3,TO-264AA |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
23+ |
TO-264 |
12000 |
專注原裝正品現(xiàn)貨特價(jià)中量大可定 |
詢價(jià) | |||
ON |
16+/17+ |
TO-3PBL |
78000 |
渠道現(xiàn)貨庫存-原裝正品 |
詢價(jià) | ||
ON |
23+ |
TO-264 |
56000 |
詢價(jià) | |||
ON |
24+ |
TO-3PBL |
36000 |
詢價(jià) | |||
ON |
2320+ |
TO-3P |
5000 |
只做原裝,特價(jià)清貨! |
詢價(jià) | ||
ONSEMI |
2021+ |
TO-3PBL |
9000 |
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià) |
詢價(jià) | ||
ON(安森美) |
23+ |
TO-264 |
13785 |
公司只做原裝正品,假一賠十 |
詢價(jià) | ||
ON |
24+ |
TO-3PBL(TO-264) |
8866 |
詢價(jià) |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- MJL21193G
- MJL21194G
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- MJL4281AG
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