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MMBT5401Q-7-F

包裝：卷帶（TR） 封裝/外殼：TO-236-3，SC-59，SOT-23-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS PNP 150V 0.6A SOT23-3

PAM

Diodes Incorporated

MMBT5401T

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Highvoltage,complementaryPairwithMMBT5551T Applications Generalpurposehighvoltageamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

MMBT5401-TP

PNPPlasticEncapsulateTransistor

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?CollectorCurrent:ICM=0.6A ?Collector-BaseVoltage:V(BR)CBO=160V ?OperatingAndStorageTemperatures–55°Cto150°C ?Capableof0.3WattsofPowerDissipation ?Marking:2L ?LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMBT5401W

Plastic-EncapsulateTransistor

FEATURE ?IdealforMediumPowerAmplificationandSwitching ?AlsoAvailableinLeadFreeVersion ?ComplementarytoMMBT5551W

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMBT5401W

HighVoltageTransistor

Features ?NSVPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBT5401W

SiliconPNPtransistorinaSOT-323PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-323PlasticPackage. Features Highvoltage,complementaryPairwithMMBT5551W. Applications Generalpurposehighvoltageamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

MMBT5401W

SOT-323Plastic-EncapsulateTransistors

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

MMBT5401W

TRANSISTOR(PNP)

FEATURES ComplementarytoMMBT5551W SmallSurfaceMountPackage IdealforMediumPowerAmplificationandSwitching

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

MMDT5401

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryNPNTypeAvailable(MMDT5551) ?IdealforMediumPowerAmplificationandSwitching ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(No

DIODES

Diodes Incorporated

MMDT5401

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

MMDT5401

Plastic-EncapsulateTransistors

Features ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?Marking:K4M ?IdealforLowPowerAmplificationandSwitching ?Ultra-smallSurfaceMountPackage ?EpitaxialPlanarDieConstruction ?EpoxymeetsUL94V-0flammabilityrating ?Moi

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMDT5401

Multi-Chip(PNPPNP)Transistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMDT5401

Plastic-EncapsulateTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMDT5401

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryNPNTypeAvailable(MMDT5551) ?IdealforMediumPowerAmplificationandSwitching ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant(Note3) ?GreenDevice(Note4and5)

DIODES

Diodes Incorporated

MMDT5401

HIGHVOLTAGESWITCHINGTRANSISTOR

DESCRIPTION TheUTC5401isahighvoltagefast-switchingdualPNPtransistor.Itischaracterizedwithhighbreakdownvoltage,highcurrentgainandhighswitchingspeed. FEATURES *HighCollector-EmitterVoltage:VCEO=-150V *Highcurrentgain

UTCUnisonic Technologies

友順友順科技股份有限公司

MMDT5401

Plastic-EncapsulateTransistors

FEATURES EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(MMDT5551) IdealforMediumPowerAmplificationandSwitching

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

MMDT5401

DualPNPSmallSignalSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableMMDT5551. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●ForLowpoweramplificationandswitching.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

MMDT5401

DUALTRANSISTOR(PNPPNP)

DUALTRANSISTOR(PNP+PNP) FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypeAvailable(MMDT5551) ●IdealforMediumPowerAmplificationandSwitching

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

MMDT5401

Plastic-EncapsulateTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMDT5401

EpitaxialPlanarDieConstruction

Features EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMDT5551) IdealforMediumPowerAmplificationandSwitching Ultra-SmallSurfaceMountPackage LeadFree/RoHSCompliant(Note3) GreenDevice(Note4and5)

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    MMBT5401Q-7-F

  • 制造商：

    Diodes Incorporated

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個(gè)

  • 系列：

    Automotive, AEC-Q101

  • 包裝：

    卷帶（TR）

  • 晶體管類型：

    PNP

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降（最大值）：

    500mV @ 5mA，50mA

  • 電流 - 集電極截止（最大值）：

    50nA（ICBO）

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)（最小值）：

    60 @ 10mA，5V

  • 頻率 - 躍遷：

    300MHz

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-236-3，SC-59，SOT-23-3

  • 供應(yīng)商器件封裝：

    SOT-23-3

  • 描述：

    TRANS PNP 150V 0.6A SOT23-3

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Diodes Incorporated
24+
TO-236-3,SC-59,SOT-23-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
DIODES/美臺(tái)
20+
SOT-23
120000
原裝正品 可含稅交易
 詢價(jià)
DIODES(美臺(tái))
23+
SOT-23
9908
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
DIODES/美臺(tái)
1645+
NA
3000
詢價(jià)
DIODES/美臺(tái)
23+
SOT-23
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低
 詢價(jià)
DIODES
22+23+
NA
25387
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
DIODES/美臺(tái)
22+
SOT-23
41329
原裝正品現(xiàn)貨
 詢價(jià)
DIODES/美臺(tái)
1645+
NA
3000
原裝正品現(xiàn)貨,可開(kāi)發(fā)票,假一賠十
 詢價(jià)
DIODES/美臺(tái)
1942+
SOT-23
9852
只做原裝正品現(xiàn)貨或訂貨!假一賠十!
 詢價(jià)
DIODES
2020+
NA
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢價(jià)
更多MMBT5401Q供應(yīng)商 更新時(shí)間2025-1-8 15:33:00

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