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MMBT5551-TP

PNP Plastic Encapsulate Transistor

Features ????????Halogenfreeavailableuponrequestbyaddingsuffix-HF ?CollectorCurrent:ICM=0.6A ?Collector-BaseVoltage:V(BR)CBO=180V ?OperatingAndStorageTemperatures–55OCto150OC ?Capableof0.3WattsofPowerDissipation ?Marking:G1 ?LeadFreeFinish/RoHSCompliant(P

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMBT5551-TP

包裝：卷帶（TR） 封裝/外殼：TO-236-3，SC-59，SOT-23-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 160V 0.6A SOT23

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMBT5551W

Plastic-EncapsulateTransistor

FEATURE ?IdealforMediumPowerAmplificationandSwitching ?AlsoAvailableinLeadFreeVersion ?ComplementarytoMMBT5401W

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMBT5551W

SiliconPNPtransistorinaSOT-323PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features Highvoltage,complementarypairwithMMBT5401W. Applications Generalpurposehighvoltageamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

MMBT5551W

MMBT5551WTRANSISTOR(NPN)

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

MMBT5551W

Plastic-EncapsulateTransistors

FEATURE IdealforMediumPowerAmplificationandSwitching AlsoAvailableinLeadFreeVersion ComplementarytoMMBT5401W

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

MMDT5551

NPNNPNPlastic-EncapsulateTransistors

Features EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(TPMMDT5401) IdealforMediumPowerAmplificationandSwitching

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

MMDT5551

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable(MMDT5401) ?IdealforMediumPowerAmplificationandSwitching ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant(Note3) ?GreenDevice(Note4and5)

DIODES

Diodes Incorporated

MMDT5551

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

MMDT5551

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable(MMDT5401) ?IdealforMediumPowerAmplificationandSwitching ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant(Note3) ?GreenDevice(Note4and5)

DIODES

Diodes Incorporated

MMDT5551

Plastic-EncapsulateTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMDT5551

Plastic-EncapsulateTransistors

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Capableof200mWattsofPowerDissipation ?Idealf

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMDT5551

DualNPNSmallSignalSurfaceMountTransistor

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

MMDT5551

Plastic-EncapsulateTransistors

FEATURES EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(MMDT5401) IdealforMediumPowerAmplificationandSwitching

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

MMDT5551

HIGHVOLTAGESWITCHINGTRANSISTOR

DESCRIPTION TheUTCMMDT5551isahighvoltagefast-switchingdualNPNtransistor.Itischaracterizedwithhighbreakdownvoltage,highcurrentgainandhighswitchingspeed. FEATURES *HighCollector-EmitterVoltage:VCEO=160V *Highcurrentgain

UTCUnisonic Technologies

友順友順科技股份有限公司

MMDT5551

Plastic-EncapsulateTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMDT5551

DUALTRANSISTOR

DUALTRANSISTOR(NPN+NPN) FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryPNPTypeAvailable(MMDT5401) ●IdealforMediumPowerAmplificationandSwitching

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

MMDT5551

Multi-ChipTRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:180V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實業(yè)深圳市永而佳實業(yè)有限公司

MMDT5551

NPNNPNPlastic-EncapsulateTransistors

FEATURES ?EpoxymeetsUL-94V-0flammabilityrating ?ComplementarytoMMDT5401 ?EpitaxialPlanarDieConstruction ?IdealforMediumPowerAmplificationandSwitching

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟南晶恒電子有限責(zé)任公司

MMDT5551

EpitaxialPlanarDieConstruction

Features EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(MMDT5401) IdealforMediumPowerAmplificationandSwitching Ultra-SmallSurfaceMountPackage LeadFree/RoHSCompliant(Note3)

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    MMBT5551-TP

  • 制造商：

    Micro Commercial Co

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個

  • 包裝：

    卷帶（TR）

  • 晶體管類型：

    NPN

  • 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：

    500mV @ 5mA，50mA

  • 電流 - 集電極截止（最大值）：

    50nA（ICBO）

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：

    100 @ 10mA，5V

  • 頻率 - 躍遷：

    100MHz

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-236-3，SC-59，SOT-23-3

  • 供應(yīng)商器件封裝：

    SOT-23

  • 描述：

    TRANS NPN 160V 0.6A SOT23

供應(yīng)商型號品牌批號封裝庫存備注價格
Micro Commercial Co
24+
TO-236-3,SC-59,SOT-23-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
MCCSEMI
23+
Tube
768000
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
MCC
24+
SOT-23
7500
詢價
MCC
23+
SOT-23
7750
全新原裝優(yōu)勢
 詢價
MCC
24+
SOT23
5000
只做原裝公司現(xiàn)貨
 詢價
MCC
1735+
SOT23
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
 詢價
MicroCommercialComponent
新
5
全新原裝 貨期兩周
 詢價
MCC
2020+
SOT23
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
Micro Commercial Components
2022+
1
全新原裝 貨期兩周
 詢價
Micro
1942+
N/A
12330
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 詢價
更多MMBT5551-TP供應(yīng)商 更新時間2024-11-8 19:56:00

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