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MO1N60

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MSU1N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTA1N60E

FULLYISOLATEDTMOSE-FETPOWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD1N60E

TMOSPOWERFET1.0AMPERE600VOLTSRDS(on)=8.0OHM

TMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD1N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N60

PowerFieldEffectTransisterN-ChannelEnhancementModeSiliconGate

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTimesSpecif

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP1N60

N-ChannelMosfetTransistor

?DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. ?FEATURES ?DrainCurrent-ID=1A@TC=25°C ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=8Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirements

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MTP1N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N60E

TMOSPOWERFET1.0AMPERES600VOLTSRDS(on)=8.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP1N60E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NDDL1N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NDTL1N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NFT1N60

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

NJ1N60

1.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ1N60A-LI

1.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ1N60-BL

1.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ1N60D-LI

1.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ1N60D-TR

1.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ1N60F-LI

1.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ1N60-TB

1.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
2023+
SMD
50000
全新原裝正品,優(yōu)勢價格
 詢價
ON/安森美
90000
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
MEIKE
Rohs2kmWPBfree
50000
全新原裝現(xiàn)貨 樣品可售
 詢價
MEIKE
24+
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
 詢價
MINIATURESTYLERESISTORS
23+
tm pdf resistor R4 MINI pdf
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MICROCOSM
1948+
TSSOP20
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
MICROCOS
2021+
SSOP16
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
MICROCOS
SSOP16
950
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
DEVICE
05+
SOP
5600
全新原裝進口自己庫存優(yōu)勢
 詢價
DEVICE
24+
SOP
5000
只做原裝公司現(xiàn)貨
 詢價
更多MO1N60供應(yīng)商 更新時間2025-1-1 10:32:00

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