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MP9N150-GE-BR

N-CHANNEL MOSFET

APPLICATIONS ?Highefficiencyswitch modepowersupplies ?Electroniclampballasts basedonhalfbridge ?UPS FEATURES ?Lowgatecharge ?LowCrss(typical10pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

9N150

N-channel1500V-1.8?-8A-TO-247veryhighvoltagePowerMESH?PowerMOSFET

Features ■100%avalanchetested ■Avalancheruggedness ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Highspeedswitching ■Verylowon-resistance Application ■Switchingapplications Description UsingthewellconsolidatedhighvoltageMESH OVERLAY?process,STMi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

9N150

9.0A,1500VN-CHANNELPOWERMOSFET

?DESCRIPTION TheUTC9N150provideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. ?FEATURES0 *RDS(ON)≤2.1Ω@VGS=10V,ID=4.5A *LowReverseTransferCapacitance *FastSwitchingCapab

UTCUnisonic Technologies

友順友順科技股份有限公司

MP9N150-GE-B

N-CHANNELMOSFET

APPLICATIONS ?Highefficiencyswitch modepowersupplies ?Electroniclampballasts basedonhalfbridge ?UPS FEATURES ?Lowgatecharge ?LowCrss(typical10pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

STW9N150

N-channel1500V-2.2廓-8A-TO-247VeryhighvoltagePowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW9N150

N-channel1500V-1.8?-8A-TO-247veryhighvoltagePowerMESH?PowerMOSFET

Features ■100%avalanchetested ■Avalancheruggedness ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Highspeedswitching ■Verylowon-resistance Application ■Switchingapplications Description UsingthewellconsolidatedhighvoltageMESH OVERLAY?process,STMi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW9N150

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

W9N150V

N-channel1500V-2.2廓-8A-TO-247VeryhighvoltagePowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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更多MP9N150-GE-BR供應(yīng)商 更新時(shí)間2025-1-1 11:06:00