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MLD2N06CL

SMARTDISCRETESTMMOSFET2Amp,62Volts,LogicLevelN??hannelDPAK

TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivefuelinjectordriver,incandescentlampdriverorotherapplicationswhereahig

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MLD2N06CL

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET62VOLTS(CLAMPED)RDS(on)=0.4OHMS TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivef

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MLD2N06CLG

SMARTDISCRETESTMMOSFET2Amp,62Volts,LogicLevelN??hannelDPAK

TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivefuelinjectordriver,incandescentlampdriverorotherapplicationswhereahig

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MLP2N06CL

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MLP2N06CL

SMARTDISCRETESTMMOSFET2Amps,62Volts,LogicLevelN??hannelTO??20

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MLP2N06CLG

SMARTDISCRETESTMMOSFET2Amps,62Volts,LogicLevelN??hannelTO??20

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMDF2N06V

DUALTMOSMOSFET3.3AMPERES60VOLTS

TMOSVSO-8forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Justasw

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMDF2N06VL

DUALTMOSMOSFET2.5AMPERES60VOLTS

TMOSV?SO-8forSurfaceMountN-ChannelEnhancement-modeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Just

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTDF2N06HD

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

RFL2N06

2A,50Vand60V,0.95Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

Intersil

Intersil Corporation

RFL2N06L

2A,60V,0.950Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFL2N06LN-channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.T

Intersil

Intersil Corporation

RFW2N06RLE

2A,60V,0.160Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFW2N06RLEN-Channel,logiclevel,ESDprotected,powerMOSFETismanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.TheRFW2N06RLEwasdesigned

Intersil

Intersil Corporation

STN2N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.21? ■AVALANCHERUGGEDTECHNOLOGY ■SOT-223CANBEWAVEORREFLOWSOLDERED ■AVAILABLEINTAPEANDREELONREQUEST ■150°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HARDDISKDRIVER

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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