MLD2N06CL中文資料Motorola數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
廠商型號(hào) |
MLD2N06CL |
參數(shù)屬性 | MLD2N06CL 封裝/外殼為T(mén)O-252-3,DPak(2 引線 + 接片),SC-63;包裝為管件;類別為集成電路(IC) > 配電開(kāi)關(guān),負(fù)載驅(qū)動(dòng)器;產(chǎn)品描述:IC PWR DRIVER N-CHANNEL 1:1 DPAK |
功能描述 | VOLTAGE CLAMPED CURRENT LIMITING MOSFET |
文件大小 |
194 Kbytes |
頁(yè)面數(shù)量 |
6 頁(yè) |
生產(chǎn)廠商 | Motorola, Inc |
企業(yè)簡(jiǎn)稱 |
Motorola |
中文名稱 | Motorola, Inc官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-11-15 17:54:00 |
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MLD2N06CL規(guī)格書(shū)詳情
VOLTAGE CLAMPED CURRENT LIMITING MOSFET 62 VOLTS (CLAMPED) RDS(on) = 0.4 OHMS
The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in–rush current or a shorted load condition could occur. This logic level power MOSFET features current limiting for short circuit protection, integrated Gate–Source clamping for ESD protection and integral Gate–Drain clamping for over–voltage protection and Sensefet technology for low on–resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 k? gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate–Source and Gate–Drain clamps allow the device to be applied without use of external transient suppression components. The Gate–Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate–Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature. The MLD2N06CL is fabricated using Motorola’s SMARTDISCRETES? technology which combines the advantages of a power MOSFET output device with the on–chip protective circuitry that can be obtained from a standard MOSFET process. This approach offers an economical means of providing protection to power MOSFETs from harsh automotive and industrial environments. SMARTDISCRETES? devices are specified over a wide temperature range from –50°C to 150°C.
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
MLD2N06CLT4G
- 制造商:
onsemi
- 類別:
集成電路(IC) > 配電開(kāi)關(guān),負(fù)載驅(qū)動(dòng)器
- 系列:
SMARTDISCRETES?
- 包裝:
管件
- 開(kāi)關(guān)類型:
通用
- 輸出數(shù):
1
- 比率 - 輸入:
1:1
- 輸出配置:
低端
- 輸出類型:
N 通道
- 接口:
開(kāi)/關(guān)
- 電壓 - 負(fù)載:
58V(最大)
- 電壓 - 供電 (Vcc/Vdd):
不需要
- 導(dǎo)通電阻(典型值):
300 毫歐
- 輸入類型:
非反相
- 工作溫度:
-50°C ~ 150°C(TJ)
- 安裝類型:
表面貼裝型
- 供應(yīng)商器件封裝:
DPAK
- 封裝/外殼:
TO-252-3,DPak(2 引線 + 接片),SC-63
- 描述:
IC PWR DRIVER N-CHANNEL 1
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
18422 |
公司只做原裝正品,假一賠十 |
詢價(jià) | |||
INFINEON/英飛凌 |
24+ |
TO-252 |
56000 |
公司進(jìn)口原裝現(xiàn)貨 批量特價(jià)支持 |
詢價(jià) | ||
ON(安森美) |
23+ |
NA/ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
ON/安森美 |
23+ |
DPAK-4 |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
ON Semiconductor |
21+ |
DPAK3 |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
ON/安森美 |
2022 |
SOT-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
ON/安森美 |
22+ |
SOT-252 |
20000 |
保證原裝正品,假一陪十 |
詢價(jià) | ||
ON/安森美 |
22+ |
TO-252-4 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
onsemi |
23+/24+ |
TO-252-3 |
8600 |
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨 |
詢價(jià) | ||
ONSemiconductor |
2022 |
MOSFETN-CHCLAMPED2A62VDP |
5058 |
原廠原裝正品,價(jià)格超越代理 |
詢價(jià) |