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MRF18

MRF18 Series Vertical Mating, Non-Magnetic 8-channel Coaxial Connector

HIROSEHirose Electric Company

廣瀨日本廣瀨電機株式會社

MRF18030A

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1805-1880MHz. ?TypicalGSMPerformanc

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

MRF18030ALR3

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1805-1880MHz. ?TypicalGSMPerformanc

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

MRF18030ALSR3

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1805-1880MHz. ?TypicalGSMPerformanc

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

MRF18030BLR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930-1990MHz. ?TypicalGSMPerformanc

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

MRF18030BLSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930-1990MHz. ?TypicalGSMPerformanc

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

MRF18030BR3

THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF18030BSR3

THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF1803BR3

THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF1803BSR3

THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF18060A

RF POWER FIELD EFFECT TRANSISTORS

TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF18060A

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

MRF18060ALR3

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

MRF18060ALSR3

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

MRF18060ALSR3

RF POWER FIELD EFFECT TRANSISTORS

TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF18060AR3

RF POWER FIELD EFFECT TRANSISTORS

TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF18060ASR3

RF POWER FIELD EFFECT TRANSISTORS

TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF18060B

RF Power Field Effect Transistors

DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. ?GSMPerformance,FullFrequency

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF18060B

RF Power Field Effect Transistor

DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. ?GSMPerformance,FullFre

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

MRF18060BLR3

RF Power Field Effect Transistor

DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. ?GSMPerformance,FullFre

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

詳細參數(shù)

  • 型號:

    MRF18

  • 制造商:

    FREESCALE

  • 制造商全稱:

    Freescale Semiconductor, Inc

  • 功能描述:

    RF Power Field Effect Transistors

供應商型號品牌批號封裝庫存備注價格
MOTOROLA
23+
TO-57S
9526
詢價
MOTOROLA
17+
0
6200
100%原裝正品現(xiàn)貨
詢價
MOTOROL
2020+
10
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
FREESCALE
NI-780
298
正品原裝--自家現(xiàn)貨-實單可談
詢價
FREESCALE
05/06+
52
全新原裝100真實現(xiàn)貨供應
詢價
MOTO
24+
SOP
6980
原裝現(xiàn)貨,可開13%稅票
詢價
24+
400
本站現(xiàn)庫存
詢價
MOTOROLA
16+
原裝進口原廠原包接受訂貨
2866
原裝現(xiàn)貨假一罰十
詢價
MOT
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
詢價
MOT
23+
高頻管
5000
原裝正品,假一罰十
詢價
更多MRF18供應商 更新時間2025-1-5 14:00:00