零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MRF18 | MRF18 Series Vertical Mating, Non-Magnetic 8-channel Coaxial Connector | HIROSEHirose Electric Company 廣瀨日本廣瀨電機株式會社 | HIROSE | |
RF Power Field Effect Transistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1805-1880MHz. ?TypicalGSMPerformanc | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | freescale | ||
RF Power Field Effect Transistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1805-1880MHz. ?TypicalGSMPerformanc | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | freescale | ||
RF Power Field Effect Transistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1805-1880MHz. ?TypicalGSMPerformanc | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | freescale | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930-1990MHz. ?TypicalGSMPerformanc | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | freescale | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930-1990MHz. ?TypicalGSMPerformanc | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | freescale | ||
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930 | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930 | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930 | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.SpecifiedforGSM1930 | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RF POWER FIELD EFFECT TRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RF Power Field Effect Transistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | freescale | ||
RF Power Field Effect Transistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | freescale | ||
RF Power Field Effect Transistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | freescale | ||
RF POWER FIELD EFFECT TRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RF POWER FIELD EFFECT TRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RF POWER FIELD EFFECT TRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RF Power Field Effect Transistors DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. ?GSMPerformance,FullFrequency | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RF Power Field Effect Transistor DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. ?GSMPerformance,FullFre | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | freescale | ||
RF Power Field Effect Transistor DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. ?GSMPerformance,FullFre | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導體 | freescale |
詳細參數(shù)
- 型號:
MRF18
- 制造商:
FREESCALE
- 制造商全稱:
Freescale Semiconductor, Inc
- 功能描述:
RF Power Field Effect Transistors
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
MOTOROLA |
23+ |
TO-57S |
9526 |
詢價 | |||
MOTOROLA |
17+ |
0 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
MOTOROL |
2020+ |
10 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | |||
FREESCALE |
NI-780 |
298 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
FREESCALE |
05/06+ |
52 |
全新原裝100真實現(xiàn)貨供應 |
詢價 | |||
MOTO |
24+ |
SOP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
24+ |
400 |
本站現(xiàn)庫存 |
詢價 | ||||
MOTOROLA |
16+ |
原裝進口原廠原包接受訂貨 |
2866 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
MOT |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
MOT |
23+ |
高頻管 |
5000 |
原裝正品,假一罰十 |
詢價 |
相關規(guī)格書
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- MRF6VP11KHR5
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- MRF89XAM8A-I/RM
- MRF89XAT-I/MQ
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相關庫存
更多- MRF18-8R-PC
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- MRF6V3090NBR5
- MRF6V4300NBR5
- MRF6VP21KHR5
- MRF6VP2600HR6
- MRF6VP3450HR6
- MRF89XAM9A-I/RM
- MRF8P20140WHSR5
- MRF904
- MRF9045NBR1