MRF18085BR3中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

? GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz)

Power Gain - 12.5 dB (Typ) @ 85 Watts CW

Efficiency - 50 (Typ) @ 85 Watts CW

? Internally Matched, Controlled Q, for Ease of Use

? High Gain, High Efficiency, and High Linearity

? Integrated ESD Protection

? Designed for Maximum Gain and Insertion Phase Flatness

? Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1930 MHz

? Excellent Thermal Stability

? Characterized with Series Equivalent Large-Signal Impedance Parameters

? Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.