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MRF21030SR3中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書

MRF21030SR3
廠商型號

MRF21030SR3

功能描述

RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

文件大小

377.52 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-18 20:00:00

MRF21030SR3規(guī)格書詳情

The RF MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

? Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts

Output Power — 3.5 Watts

Power Gain — 14 dB

Efficiency — 15

? High Gain, High Efficiency and High Linearity

? Integrated ESD Protection

? Designed for Maximum Gain and Insertion Phase Flatness

? Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW Output Power

? Excellent Thermal Stability

? Characterized with Series Equivalent Large–Signal Impedance Parameters

? In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

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