MRF6P3300HR3分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

470-860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt analog or digital television transmitter equipment.

? Typical Narrowband Two-Tone Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP

Power Gain — 20.2 dB

Drain Efficiency — 44.1

IMD — -30.8 dBc

? Typical Narrowband DVBT OFDM Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 60 Watts Avg., 8K Mode, 64 QAM

Power Gain — 20.4 dB

Drain Efficiency — 29

ACPR @ 3.9 MHz Offset — -57 dBc @ 20 kHz Bandwidth

? Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW Output Power

Features

? Characterized with Series Equivalent Large-Signal Impedance Parameters

? Internally Matched for Ease of Use

? Designed for Push-Pull Operation Only

? Qualified Up to a Maximum of 32 VDD Operation

? Integrated ESD Protection

? Lower Thermal Resistance Package

? Low Gold Plating Thickness on Leads, 40μ″ Nominal.

? RoHS Compliant

? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.