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MRF6S9060NBR1分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料
| 廠商型號 |
MRF6S9060NBR1 |
| 參數(shù)屬性 | MRF6S9060NBR1 封裝/外殼為TO-272BC；包裝為卷帶（TR）；類別為分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻；產(chǎn)品描述：FET RF 68V 880MHZ TO-272-2 |
| 功能描述 | RF Power Field Effect Transistors |
| 封裝外殼 | TO-272BC |
| 文件大小 |
711.91 Kbytes |
| 頁面數(shù)量 |
18 頁 |
| 生產(chǎn)廠商 | Freescale Semiconductor, Inc |
| 企業(yè)簡稱 |
freescale【飛思卡爾】 |
| 中文名稱 | 飛思卡爾半導(dǎo)體官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-1-20 22:04:00 |
MRF6S9060NBR1規(guī)格書詳情
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
? Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01 Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1
ACPR @ 750 kHz Offset — -47.6 dBc @ 30 kHz Bandwidth
GSM EDGE Application
? Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5 rms
GSM Application
? Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63
? Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power
? Characterized with Series Equivalent Large-Signal Impedance Parameters
? Integrated ESD Protection
? N Suffix Indicates Lead-Free Terminations
? 200°C Capable Plastic Package
? TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
? TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
產(chǎn)品屬性
- 產(chǎn)品編號：
MRF6S9060NBR1
- 制造商：
NXP USA Inc.
- 類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻
- 包裝：
卷帶（TR）
- 晶體管類型：
LDMOS
- 頻率：
880MHz
- 增益：
21.4dB
- 功率 - 輸出：
14W
- 封裝/外殼：
TO-272BC
- 供應(yīng)商器件封裝：
TO-272-2
- 描述：
FET RF 68V 880MHZ TO-272-2
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NXP |
22+ |
TO2722 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
FREESCALE |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
FREESCALE |
699839 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | ||||
FREESCALE |
07+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
Freescale |
24+ |
TO-272-2 |
1500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
FREESCALE |
23+ |
高頻管 |
650 |
專營高頻管模塊,全新原裝! |
詢價(jià) | ||
FREESCALE |
04+ |
高頻管模塊 |
6000 |
絕對原裝自己現(xiàn)貨 |
詢價(jià) | ||
FREESCALE |
05+33 |
14 |
公司優(yōu)勢庫存 熱賣中! |
詢價(jià) | |||
FREESCALE |
22+ |
TO-272WB-4 |
2000 |
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢 |
詢價(jià) | ||
FRESSCAL |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價(jià)格優(yōu)勢 |
詢價(jià) |
