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MRF6S9060NR1分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料
廠商型號 |
MRF6S9060NR1 |
參數(shù)屬性 | MRF6S9060NR1 封裝/外殼為TO-270AA;包裝為卷帶(TR);類別為分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻;產(chǎn)品描述:FET RF 68V 880MHZ TO-270-2 |
功能描述 | RF Power Field Effect Transistors |
封裝外殼 | TO-270AA |
文件大小 |
711.91 Kbytes |
頁面數(shù)量 |
18 頁 |
生產(chǎn)廠商 | Freescale Semiconductor, Inc |
企業(yè)簡稱 |
freescale【飛思卡爾】 |
中文名稱 | 飛思卡爾半導體官網(wǎng) |
原廠標識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2025-2-3 16:33:00 |
MRF6S9060NR1規(guī)格書詳情
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
? Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01 Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1
ACPR @ 750 kHz Offset — -47.6 dBc @ 30 kHz Bandwidth
GSM EDGE Application
? Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5 rms
GSM Application
? Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63
? Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power
? Characterized with Series Equivalent Large-Signal Impedance Parameters
? Integrated ESD Protection
? N Suffix Indicates Lead-Free Terminations
? 200°C Capable Plastic Package
? TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
? TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
產(chǎn)品屬性
- 產(chǎn)品編號:
MRF6S9060NR1
- 制造商:
NXP USA Inc.
- 類別:
分立半導體產(chǎn)品 > 晶體管 - FET,MOSFET - 射頻
- 包裝:
卷帶(TR)
- 晶體管類型:
LDMOS
- 頻率:
880MHz
- 增益:
21.4dB
- 功率 - 輸出:
14W
- 封裝/外殼:
TO-270AA
- 供應商器件封裝:
TO-270-2
- 描述:
FET RF 68V 880MHZ TO-270-2
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FREESCALE |
23+ |
高頻管 |
650 |
專營高頻管模塊,全新原裝! |
詢價 | ||
FREESCALE |
05+33 |
10 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
FREESCALE |
22+ |
TO-272WB-4 |
2000 |
原裝現(xiàn)貨庫存.價格優(yōu)勢 |
詢價 | ||
FRESSCAL |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
MOTOROLA |
24+ |
12 |
詢價 | ||||
FREESCA |
18+ |
TO-57 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
NXP |
23+ |
TO2702 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
NXP USA Inc. |
2022+ |
TO-270-2 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
FREESCALE |
06+ |
TO-270-2 |
2 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
FREESCA |
2020+ |
TO-270- |
2 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 |