首頁 >MRF6V2300N>規(guī)格書列表
| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MRF6V2300N | N-Channel Enhancement-Mode Lateral MOSFETs RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedprimarilyforCWlarge--signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | |
N-Channel Enhancement-Mode Lateral MOSFETs RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedprimarilyforCWlarge--signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedprimarilyforCWlarge--signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedprimarilyforCWlarge--signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedprimarilyforCWlarge--signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedprimarilyforCWlarge--signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedprimarilyforCWlarge--signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedprimarilyforCWlarge--signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedprimarilyforCWlarge--signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications. | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
Package：TO-272BB；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 110V 220MHZ TO-272-4 | NXP USA Inc. NXP USA Inc. | NXP USA Inc. | ||
Package：TO-270AB；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 110V 220MHZ TO-270-4 | NXP USA Inc. NXP USA Inc. | NXP USA Inc. | ||
Package：TO-270AB；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 110V 220MHZ TO-270-4 | NXP USA Inc. NXP USA Inc. | NXP USA Inc. |
詳細(xì)參數(shù)
- 型號(hào)：
MRF6V2300N
- 制造商：
FREESCALE
- 制造商全稱：
Freescale Semiconductor, Inc
- 功能描述：
N-Channel Enhancement-Mode Lateral MOSFETs
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
FREESCALE |
24+ |
TO-59 |
96 |
價(jià)格優(yōu)勢 |
詢價(jià) | ||
FREESCALE |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價(jià)格優(yōu)勢 |
詢價(jià) | ||
NXP/恩智浦 |
2324+ |
NA |
78920 |
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口 |
詢價(jià) | ||
Fairchild |
24+ |
7500 |
詢價(jià) | ||||
fcs |
23+ |
高頻管 |
155 |
專營高頻管模塊,全新原裝! |
詢價(jià) | ||
Freescale |
24+ |
TO-272WB-4 |
1500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
NXP |
1701+ |
? |
11520 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
FSL |
23+ |
原廠原包裝 |
6000 |
全新原裝假一賠十 |
詢價(jià) | ||
FSL |
24+ |
SMD |
2789 |
全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢! |
詢價(jià) |
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