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MRF7S18170H分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

MRF7S18170H
廠(chǎng)商型號(hào)

MRF7S18170H

參數(shù)屬性

MRF7S18170H 封裝/外殼為SOT-957A;包裝為卷帶(TR);類(lèi)別為分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻;產(chǎn)品描述:FET RF 65V 1.81GHZ NI-880

功能描述

RF Power Field Effect Transistors

封裝外殼

SOT-957A

文件大小

1.01021 Mbytes

頁(yè)面數(shù)量

18 頁(yè)

生產(chǎn)廠(chǎng)商 NXP Semiconductors
企業(yè)簡(jiǎn)稱(chēng)

nxp恩智浦

中文名稱(chēng)

恩智浦半導(dǎo)體公司官網(wǎng)

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更新時(shí)間

2025-1-7 22:29:00

MRF7S18170H規(guī)格書(shū)詳情

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1805 to

1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

used in Class AB and Class C for PCN--PCS/cellular radio and WLL

applications.

? Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =

1400 mA, Pout = 50 Watts Avg., f = 1807.5 MHz, IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01

Probability on CCDF.

Power Gain ? 17.5 dB

Drain Efficiency ? 31

Device Output Signal PAR ? 6.2 dB @ 0.01 Probability on CCDF

ACPR @ 5 MHz Offset ? --37 dBc in 3.84 MHz Channel Bandwidth

? Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW

Output Power

? Pout @ 1 dB Compression Point ? 170 Watts CW

Features

? 100 PAR Tested for Guaranteed Output Power Capability

? Characterized with Series Equivalent Large--Signal Impedance Parameters

? Internally Matched for Ease of Use

? Integrated ESD Protection

? Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

? Designed for Digital Predistortion Error Correction Systems

? RoHS Compliant

? In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel option, see p. 17.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    MRF7S18170HR5

  • 制造商:

    NXP USA Inc.

  • 類(lèi)別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET,MOSFET - 射頻

  • 包裝:

    卷帶(TR)

  • 晶體管類(lèi)型:

    LDMOS

  • 頻率:

    1.81GHz

  • 增益:

    17.5dB

  • 功率 - 輸出:

    50W

  • 封裝/外殼:

    SOT-957A

  • 供應(yīng)商器件封裝:

    NI-880H-2L

  • 描述:

    FET RF 65V 1.81GHZ NI-880

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