MRFE6S9045NR1分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

? Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01 Probability on CCDF.

Power Gain — 22.1 dB

Drain Efficiency — 32

ACPR @ 750 kHz Offset — -46 dBc in 30 kHz Channel Bandwidth

? Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

GSM EDGE Application

? Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (920-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 46

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 1.5 rms

GSM Application

? Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts, Full Frequency Band (920-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 68

Features

? Characterized with Series Equivalent Large-Signal Impedance Parameters

? Integrated ESD Protection

? 225°C Capable Plastic Package

? RoHS Compliant

? In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.