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MSC81005

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION TheMSC81005isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishboneemitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedratedconditions.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MSC81010

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION TheMSC81010isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishbone,emitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinginfiniteloadVSWRatanyphaseangleunderratedconditions. TheMS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MSC81020

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION TheMSC81020isacommonbasehermeticallysealedsiliconNPNmicrowavetranisitorutilizingafishboneemitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceisdesignedforClassCamplifierapplicationsinthe0.4-1.2GHzfrequencyrange. .EMI

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MSC81035M

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION TheMSC81035MisamediumpowerClassCtransistordesignedspecificallyforpulsedL-Bandavionicsapplications.ThisdeviceisadirectreplacementfortheMSC1035M.MSC81035Moffersimprovedsaturatedouputpowerandcollectorefficiencybasedonthetestcircuitdescribedherein.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MSC81035M

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIMSC81035Misacommonbasedevice,mediumpowerClassCtransistorforpulsedL-Bandavionics,DME/TACANApplications. FEATURES: ?Inputmatching ?EmittersiteBallasted. ?PG=10dBat35W/1150MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

MSC81035MP

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION TheMSC81035MPisamediumpowerClassCtransistordesignedspecificallyforpulsedL-Bandavionicsapplications.ThisdeviceisadirectreplacementfortheMSC1035MP.MSC81035MPoffersimprovedsaturatedouputpowerandcollectorefficiencybasedonthetestcircuitdescribedhe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MSC81038

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIMSC81058isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1.2GHz. FEATURES: ?PG=10dBmin.at10W/1.0GHz ?HermeticMicrostripPackage ?Omnigold?MetalizationSystem ?EmitterBallasted

ASI

Advanced Semiconductor

MSC81058

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION TheMSC81058isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishbone,emitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinginfiniteloadVSWRatanyphaseangleunderratedconditions. TheMS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MSC81090

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIMSC81090isDesignedforGeneralPurposeClassAPowerAmplifierApplicationsfrom0.4-1.2GHz. FEATURES: ?PG=10dBmin.at2.0W/1.0GHz ?HermeticallysealedPackage ?Omnigold?MetalizationSystem ?EmitterBallasted

ASI

Advanced Semiconductor

MSC81111

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION TheMSC81111isacommonbasehermeticallysealedsiliconNPNmicrowavetransistorutilizingafishboneemitterballastedgeometrywitharefractory/goldmetallizationsystem.ThisdeviceiscapableofwithstandinganinfiniteloadVSWRatanyphaseangleunderratedratedconditions.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    MSC8

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

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ST
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39
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ASI
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8510
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ST
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23480
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10000
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2LFL
2568
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MSC80196
1
1
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20000
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50000
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22+
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50000
只做原裝正品,假一罰十,歡迎咨詢
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200
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更多MSC8供應(yīng)商 更新時(shí)間2025-3-14 17:57:00

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