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MT46V16M8TG-75中文資料鎂光數(shù)據(jù)手冊PDF規(guī)格書

MT46V16M8TG-75
廠商型號

MT46V16M8TG-75

參數(shù)屬性

MT46V16M8TG-75 封裝/外殼為66-TSSOP(szeroko?? 0,400",10,16mm);包裝為卷帶(TR);類別為集成電路(IC) > 存儲器;產(chǎn)品描述:IC DRAM 128MBIT PARALLEL 66TSOP

功能描述

DOUBLE DATA RATE DDR SDRAM

文件大小

2.54771 Mbytes

頁面數(shù)量

68

生產(chǎn)廠商 Micron Technology
企業(yè)簡稱

Micron鎂光

中文名稱

美國鎂光科技有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-7 22:30:00

MT46V16M8TG-75規(guī)格書詳情

GENERAL DESCRIPTION

The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quadbank DRAM.

The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the 128Mb DDR SDRAM effectively consists of a single 2n-bit wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.

FEATURES

? VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V

? Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two – one per byte)

? Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle

? Differential clock inputs (CK and CK#)

? Commands entered on each positive CK edge

? DQS edge-aligned with data for READs; centeraligned with data for WRITEs

? DLL to align DQ and DQS transitions with CK

? Four internal banks for concurrent operation

? Data mask (DM) for masking write data (x16 has two – one per byte)

? x16 has programmable IOL/IOH option

? Programmable burst lengths: 2, 4, or 8

? Auto precharge option

? Auto Refresh and Self Refresh Modes

? Longer lead TSOP for improved reliability (OCPL)

? 2.5V I/O (SSTL_2 compatible)

產(chǎn)品屬性

  • 產(chǎn)品編號:

    MT46V16M8TG-75

  • 制造商:

    Micron Technology Inc.

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    卷帶(TR)

  • 存儲器類型:

    易失

  • 存儲器格式:

    DRAM

  • 技術:

    SDRAM - DDR

  • 存儲容量:

    128Mb(16M x 8)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    15ns

  • 電壓 - 供電:

    2.3V ~ 2.7V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    66-TSSOP(szeroko?? 0,400",10,16mm)

  • 供應商器件封裝:

    66-TSOP

  • 描述:

    IC DRAM 128MBIT PARALLEL 66TSOP

供應商 型號 品牌 批號 封裝 庫存 備注 價格
MICRON
2020+
TSSOP
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
INTEL/英特爾
23+
NA/
234
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
MICRON
2023+
TSSOP
3715
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價
MICRON
22+
TSSOP66
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價
MICRON
TSSOP
699839
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
MICRON
2021+
60000
原裝現(xiàn)貨,歡迎詢價
詢價
MICRON/美光
22+
TSSOP
6550
絕對原裝公司現(xiàn)貨!
詢價
Micron Technology Inc
23+/24+
66-TSSOP
8600
只供原裝進口公司現(xiàn)貨+可訂貨
詢價
MT
22+
SOP
2987
絕對全新原裝現(xiàn)貨供應!
詢價
MICRON
22+
TSSOP
3000
原裝正品,支持實單
詢價