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首頁>MT47H512M4EB-25E:C TR>芯片詳情
MT47H512M4EB-25E 集成電路(IC)存儲器 MICRON/鎂光
- 詳細信息
- 規(guī)格書下載
產(chǎn)品參考屬性
- 類型
描述
- 產(chǎn)品編號:
MT47H512M4EB-25E
- 制造商:
Micron Technology Inc.
- 類別:
- 包裝:
卷帶(TR)
- 存儲器類型:
易失
- 存儲器格式:
DRAM
- 技術(shù):
SDRAM - DDR2
- 存儲容量:
2Gb(512M x 4)
- 存儲器接口:
并聯(lián)
- 寫周期時間 - 字,頁:
15ns
- 電壓 - 供電:
1.7V ~ 1.9V
- 工作溫度:
0°C ~ 85°C(TC)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
60-TFBGA
- 供應(yīng)商器件封裝:
60-FBGA(9x11.5)
- 描述:
IC DRAM 2GBIT PARALLEL 60FBGA
供應(yīng)商
- 企業(yè):
兆億微波(北京)科技有限公司
- 商鋪:
- 聯(lián)系人:
魏小姐
- 手機:
13718660290
- 詢價:
- 電話:
010-82888379
- 地址:
北京市海淀區(qū)上地五街16號1幢4層4110室
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