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MTH50N05E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTM50N05

TMOSIVPOWERFIELDEFFECTTRANSISTORS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTM50N05E

TMOSIVPOWERFIELDEFFECTTRANSISTORS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP50N05E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP50N05EL

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

OM50N05SA

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr

IRF

International Rectifier

OM50N05ST

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr

IRF

International Rectifier

RFG50N05

50A,50V,0.022Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFET’SmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingr

Intersil

Intersil Corporation

RFG50N05L

50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs

Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFG50N05L

50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs

Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    MTAJ50N05HD

  • 制造商:

    ON Semiconductor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
onsemi(安森美)
23+
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
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ON
23+
TO-220F
6893
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CYSTECH/全宇昕
24+
SOT-523
360000
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LEDTECH
24+
DIP
100
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LEDTECH
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15000
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2018+
SMD
6000
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圓達(dá)
2022+
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6000
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LUCENT
24+
4020
原裝現(xiàn)貨假一罰十
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22+
BGA
2317
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1844+
BGA
9852
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更多MTAJ50N05HD供應(yīng)商 更新時(shí)間2025-2-4 23:00:00