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MTB23P06

TMOSPOWERFET23AMPERES60VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount P-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB23P06

TMOSPOWERFET23AMPERES60VOLTS

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB23P06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB23P06E

TMOSPOWERFET23AMPERES60VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount P-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB23P06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB23P06V

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTB23P06V

P??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB23P06V

TMOSPOWERFET23AMPERES60VOLTS

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP23P06V

PowerMOSFET23Amps,60Volts

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP23P06V

TMOSPOWERFET23AMPERES60VOLTSRDS(on)=0.120OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
2447
SOT263
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
ON/安森美
23+
SOT263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ON/安森美
2022
SOT263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
ON/安森美
2022+
SOT263
1000
原廠代理 終端免費提供樣品
 詢價
ON/安森美
23+
SOT263
6000
原裝正品，支持實單
 詢價
ON
20+
SOT263
1000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ON
23+
SOT263
1000
正規(guī)渠道,只有原裝!
 詢價
ON
SOT263
699839
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ON
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
 詢價
ON/安森美
23+
NA/
4250
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
更多MTB23P06EV供應(yīng)商 更新時間2025-2-12 15:00:00

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