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MTB75N06HD中文資料Motorola數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

MTB75N06HD
廠(chǎng)商型號(hào)

MTB75N06HD

功能描述

TMOS POWER FET 75 AMPERES 60 VOLTS

文件大小

342.06 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠(chǎng)商 Motorola, Inc
企業(yè)簡(jiǎn)稱(chēng)

Motorola

中文名稱(chēng)

Motorola, Inc官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠(chǎng)下載

更新時(shí)間

2024-11-2 14:08:00

MTB75N06HD規(guī)格書(shū)詳情

N–Channel Enhancement–Mode Silicon Gate

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–celldensity HDTMOS powerFET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applicationsin power supplies, converters and PWM motor controls,these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are criticaland offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSSand VDS(on)Specified at Elevated Temperature

? Short Heatsink Tab Manufactured — Not Sheared

? Specially Designed Leadframe for Maximum Power Dissipation

? Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number

產(chǎn)品屬性

  • 型號(hào):

    MTB75N06HD

  • 制造商:

    ON Semiconductor

  • 功能描述:

    Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK Rail

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