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MTD20N06HDL規(guī)格書詳情
HDTMOS E-FET? Power Field Effect Transistor
DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guess work in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSSand VDS(on)Specified at Elevated Temperature
? Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
? Available in Insertion Mount, Add –1 or 1 to Part Number
產(chǎn)品屬性
- 型號：
MTD20N06HDL
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail
- 功能描述：
MOSFET N LOGIC D-PAK
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
0413+ |
TO-252 |
995 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ON/安森美 |
23+ |
NA/ |
33564 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ON/安森美 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
ON |
20+ |
TO-252 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
ON |
1822+ |
TO-252 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
ON(安森美) |
23+ |
NA/ |
7350 |
現(xiàn)貨供應(yīng),當天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
ON(安森美) |
23+ |
17728 |
公司只做原裝正品,假一賠十 |
詢價 | |||
ON/安森美 |
TO-252 |
207141 |
一級代理原裝正品,價格優(yōu)勢,支持實單! |
詢價 | |||
ON/安森美 |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
ON |
23+ |
TO-252 |
6893 |
詢價 |
