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MTD2955E

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

TMOSE-FET?PowerFieldEffectTransistorDPAKforSurfaceMountP–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD2955E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTD2955V

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

TMOSV?PowerFieldEffectTransistorDPAKForSurfaceMountP–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD2955V

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(O

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTD2955V

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTD2955E

Power Field Effect

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955ET4

Power Field Effect

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955ET4G

P-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTD2955V

Power MOSFET 12A, 60V P-Channel DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955V-1

Power MOSFET 12A, 60V P-Channel DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MTD2955

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON
24+
N/A
5000
公司存貨
 詢價(jià)
MOT
23+
TO-252
6680
全新原裝優(yōu)勢(shì)
 詢價(jià)
mot
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
ON
18+
TO-252
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價(jià)
ON
24+
TO-252
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理
 詢價(jià)
ON
1709+
TO-252/D-PAK
32500
普通
 詢價(jià)
ON/安森美
21+
TO-252(DPAK)
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
VBsemi(臺(tái)灣微碧)
2112+
TO-252
105000
2500個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
 詢價(jià)
O
23+
DPAK
10000
公司只做原裝正品
 詢價(jià)
ON(安森美)
6000
詢價(jià)
更多MTD2955供應(yīng)商 更新時(shí)間2025-1-21 16:00:00

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