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MTD2N20

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=2A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTD2N20

POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE

Motorola

Motorola, Inc

MTEE2N20FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTP2N20

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP2N20

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP2N20

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

MTP2N20

POWERFIELDEFFECTTRANSISTOR,N-CHANNELENHANCEMENT-MODESILICONGATE

Motorola

Motorola, Inc

MTP2N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.25A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

RFP2N20

2A,200V,3.500Ohm,N-ChannelPowerMOSFET

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

Intersil

Intersil Corporation

RFP2N20L

N-ChannelLogicLevelPowerField-EffectTransistors(L2FET)

TheRFL1N18LandRFL1N20LandtheRFP2N18LandRFP2N20Laren-channelenhancement-modesilicon-gatepower,field-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesInapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP2N20L

N-ChannelLogicLevelPowerField-EffectTransistors(L2FET)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP2N20L

2A,200V,3.500Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFP2N20LN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecial

Intersil

Intersil Corporation

RT2N20M

COMPOSITETRANSISTORWITHRESISTORFORSWITCHINGAPPLICATIONSILICONNPNEPITAXIALTYPE

DESCRIPTION RT2N20Misacompositetransistorwithbuilt-inbiasresistor FEATURE ●Built-inbiasresistor(R1=4.7KΩ) ●Minipackageforeasymounting APPLICATION Invertedcircuit,switchingcircuit,interfacecircuit,drivercircuit

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    MTD2N20

  • 制造商:

    MOTOROLA

  • 制造商全稱:

    Motorola, Inc

  • 功能描述:

    POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE

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23+
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6893
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30000
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16+
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3079
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6430
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M
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10000
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M
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6000
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更多MTD2N20供應(yīng)商 更新時(shí)間2024-11-7 9:52:00