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RFP2N20

2A, 200V, 3.500 Ohm, N-Channel Power MOSFET

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

Intersil

Intersil Corporation

RFP2N20L

2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET

TheRFP2N20LN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecial

Intersil

Intersil Corporation

RFP2N20L

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

TheRFL1N18LandRFL1N20LandtheRFP2N18LandRFP2N20Laren-channelenhancement-modesilicon-gatepower,field-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesInapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

RFP2N20L

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

2N20

DrainCurrentID=2A@TC=25C

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

EMDA2N20A

N‐ChannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMDA2N20F

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS200V RDSON(MAX.)120mΩ ID18A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

HM2N20

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM2N20MR

200VN-ChannelEnhancementModeMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM2N20R

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

MPT2N20

N-ChannelPowerMOSFETs,3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MTD2N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=2A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD2N20

POWERFIELDEFFECTTRANSISTORN-CHANNELENHANCEMENT-MODESILICONGATE

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTEE2N20FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTP2N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.25A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP2N20

POWERFIELDEFFECTTRANSISTOR,N-CHANNELENHANCEMENT-MODESILICONGATE

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2N20

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

MTP2N20

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

MTP2N20

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

RT2N20M

COMPOSITETRANSISTORWITHRESISTORFORSWITCHINGAPPLICATIONSILICONNPNEPITAXIALTYPE

DESCRIPTION RT2N20Misacompositetransistorwithbuilt-inbiasresistor FEATURE ●Built-inbiasresistor(R1=4.7KΩ) ●Minipackageforeasymounting APPLICATION Invertedcircuit,switchingcircuit,interfacecircuit,drivercircuit

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會社

詳細參數(shù)

  • 型號：

    RFP2N20

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

  • 制造商：

    Harris Corporation

供應商型號品牌批號封裝庫存備注價格
HAR
24+
N/A
2650
詢價
INTERSIL/FSC
23+
TO-220
28610
詢價
HARRIS
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
HARRIS
2020+
TO-220
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
INFINOEN
23+
PG-TO263
69820
終端可以免費供樣,支持BOM配單!
 詢價
FAIRCHILD/仙童
23+
TO-220
10000
公司只做原裝正品
 詢價
FAIRCHILD/仙童
22+
TO-220
6000
十年配單,只做原裝
 詢價
FAIRCHILD/仙童
23+
TO-220
6000
原裝正品，支持實單
 詢價
HARRIS
22+
TO-220
6868
全新正品現(xiàn)貨 有掛就有現(xiàn)貨
 詢價
HARRIS(哈利斯)
20+
TO-220AB
3000
詢價
更多RFP2N20供應商 更新時間2024-12-22 16:00:00

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