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MTD6N20E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書

MTD6N20E
廠商型號(hào)

MTD6N20E

功能描述

TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM

文件大小

269.66 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-9 20:18:00

人工找貨

MTD6N20E價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

MTD6N20E規(guī)格書詳情

TMOS E-FET Power Field Effect Transistors DPAK for Surface Mount

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

? Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add –T4 Suffix to Part Number

產(chǎn)品屬性

  • 型號(hào):

    MTD6N20E

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    ON Semiconductor

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ON
23+
TO-252
6893
詢價(jià)
ON/安森美
22+
SOT252
100000
代理渠道/只做原裝/可含稅
詢價(jià)
ON/安森美
23+
NA/
7010
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
ON
22+23+
TO252
74022
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價(jià)
ON
24+
35200
一級(jí)代理/放心采購
詢價(jià)
ON
24+
DIP
30000
原裝正品公司現(xiàn)貨,假一賠十!
詢價(jià)
ON/安森美
24+
TO-252
505348
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
ON
22+
TO-252
3000
原裝正品,支持實(shí)單
詢價(jià)
ON
21+
DIP
10000
只做原裝,質(zhì)量保證
詢價(jià)
ON/安森美
24+
15000
只做原廠渠道 可追溯貨源
詢價(jià)