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PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS306PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306NZ-Q

100V,5.1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS306PZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306PZ

100V,4.1APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS306PZ

100V,4.1APNPlowVCEsat(BISS)transistor

Featuresandbenefits ?Lowcollector-emittersaturation voltageVCEsat ?Highcollectorcurrentcapability ICandICM ?Highcollectorcurrentgain(hFE)at highIC ?Highefficiencyduetolessheat generation ?SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306PZ-Q

100V,4.1APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBY306

Silicon-PowerRectifiers

Silicon-PowerRectifiers ?Nominalcurrent35A ?Repetitivepeakreversevoltage50~1000V ?MetalcaseDO-5 ?Weightapprox.6g ?Standardpolarity:Cathodetostud ?IndexR:Anodetostud ?Standardpackaging:bulk

Diotec

Diotec Semiconductor

PBY306

Silicon-Power-Rectifiers

Diotec

Diotec Semiconductor

詳細(xì)參數(shù)

  • 型號:

    MTL306D

  • 功能描述:

    撥動開關(guān) 3PDT ON-NONE-ON

  • RoHS:

  • 制造商:

    C&K Components

  • 觸點(diǎn)形式:

    DPDT

  • 開關(guān)功能:

    ON - ON - ON

  • 電流額定值:

    電壓額定值

  • AC:

    20 V 電壓額定值

  • DC:

    20 V

  • 功率額定值:

    0.4 VA

  • 端接類型:

    V-Bracket

  • 端子密封:

    Epoxy

  • 觸點(diǎn)電鍍:

    Gold

  • 照明:

    Not Illuminated

供應(yīng)商型號品牌批號封裝庫存備注價格
TEConnectivity
35
全新原裝 貨期兩周
詢價
TE Connectivity
2022+
31
全新原裝 貨期兩周
詢價
TE
20+
開關(guān)元件
96
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價
TE/泰科
23+
DIP
15238
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
TE
24+
con
35960
查現(xiàn)貨到京北通宇商城
詢價
TycoElectron
23+
65600
詢價
Linear
2020+
TO-220
2464
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
Linear
24+
TO-220
2464
詢價
Linear
23+
TO-220
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價
LINEAR
23+
SMD
4000
正品原裝貨價格低
詢價
更多MTL306D供應(yīng)商 更新時間2025-4-26 16:06:00