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MTP50N06中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

MTP50N06
廠商型號(hào)

MTP50N06

功能描述

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

文件大小

179.52 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡(jiǎn)稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-19 12:00:00

MTP50N06規(guī)格書詳情

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

N–Channel Enhancement–Mode Silicon Gate

TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

New Features of TMOS V

? On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

? Faster Switching than E–FET Predecessors

Features Common to TMOS V and TMOS E–FETS

? Avalanche Energy Specified

? IDSS and VDS(on) Specified at Elevated Temperature

? Static Parameters are the Same for both TMOS V and TMOS E–FET

產(chǎn)品屬性

  • 型號(hào):

    MTP50N06

  • 制造商:

    MOTOROLA

  • 制造商全稱:

    Motorola, Inc

  • 功能描述:

    TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

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