零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
MTP50N06 | TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | |
MTP50N06 | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | |
MTP50N06 | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOS V??Power Field Effect Transistor TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI |
詳細參數(shù)
- 型號:
MTP50N06
- 制造商:
MOTOROLA
- 制造商全稱:
Motorola, Inc
- 功能描述:
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO 220 |
161577 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
24+ |
1100 |
真實現(xiàn)貨庫存 |
詢價 | ||||
MOT |
17+ |
TO-220 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
MOT |
23+ |
TO-220 |
6680 |
全新原裝優(yōu)勢 |
詢價 | ||
ON |
2023+ |
TO-220 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
MOTOROLA |
24+ |
TO-220 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
ON/IR |
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
IR |
22+ |
TO-220 |
5623 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
MOTOROLA/摩托羅拉 |
2021+ |
TO-220 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
MOTOROLA/摩托羅拉 |
19+ |
TO220 |
1200 |
進口原裝現(xiàn)貨 |
詢價 |
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