| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MTP6N60 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | |
MTP6N60 | N-Channel Mosfet Transistor DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. FEATURES ?DrainCurrent-ID=6A@TC=25°C ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirement | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
MTP6N60 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS TMOSE-FET? PowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstand | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Power Field Effect Transistor | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
6.2A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
6.2A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
6.2A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
6.2A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
6.2A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
6.2A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
6.2A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
PowerMOSFET6Amps,600VoltsN?ChannelTO?220 Designedforhighvoltage,highspeedswitchingapplicationsin powersupplies,converters,powermotorcontrolsandbridgecircuits. Features ?HigherCurrentRating ?LowerRDS(on) ?LowerCapacitances ?LowerTotalGateCharge ?TighterVSDSpecifications ?AvalancheEnergySpecified | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
PowerMOSFET6Amps,600VoltsN?ChannelTO?220 Designedforhighvoltage,highspeedswitchingapplicationsin powersupplies,converters,powermotorcontrolsandbridgecircuits. Features ?HigherCurrentRating ?LowerRDS(on) ?LowerCapacitances ?LowerTotalGateCharge ?TighterVSDSpecifications ?AvalancheEnergySpecified | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
詳細參數(shù)
- 型號：
MTP6N60
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 220 |
161228 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ON |
23+ |
TO-220 |
6893 |
詢價 | |||
ST |
2016+ |
220 |
6528 |
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費送樣品! |
詢價 | ||
24+ |
5000 |
公司存貨 |
詢價 | ||||
MOT |
06+ |
TO-220 |
2500 |
自己公司全新庫存絕對有貨 |
詢價 | ||
ON |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
ST |
17+ |
TO-220 |
6200 |
詢價 | |||
ON/ST |
24+ |
TO-220 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
ST |
TO-220 |
10265 |
提供BOM表配單只做原裝貨值得信賴 |
詢價 | |||
ON |
2020+ |
TO-220 |
35000 |
100%進口原裝正品公司現(xiàn)貨庫存 |
詢價 |
相關(guān)規(guī)格書
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- MTPH157K020P1C
- MTPH157M020P1C
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- MTPH226K060P1B
- MTPH226M060P1B
- MTPH227M015P1C
- MTPH306M050P1B
- MTPH307M010P1C
