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MTP9N25

TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowv

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP9N25E

TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowv

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP9N25E

Power Field Effect Transistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

9N25

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

CEB9N25

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■250V,8.1A,RDS(ON)=450m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP9N25

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■250V,8.1A,RDS(ON)=450m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

FQB9N25

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?9.4A,250V,RDS(on)=0.42?@VGS=10V ?Lowgatecharge(typical15.5nC) ?LowCrss(typical15pF) ?Fastswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB9N25C

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD9N25

250VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD9N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MTP9N25

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MOT
06+
TO-220
3000
原裝庫(kù)存
 詢價(jià)
ON
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價(jià)
ON
24+
N/A
7000
詢價(jià)
ON
23+
TO-220
6893
詢價(jià)
ON
2020+
TO-220
35000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
 詢價(jià)
DIODES/美臺(tái)
23+
D2PAK
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
ON/安森美
2022+
TO220
12888
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
37850
23+
10
15523
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
ON/安森美
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢價(jià)
MOTOLA
23+
2800
正品原裝貨價(jià)格低
 詢價(jià)
更多MTP9N25供應(yīng)商 更新時(shí)間2025-3-14 14:54:00

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