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MTP75N06HD中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

廠商型號(hào) |
MTP75N06HD |
功能描述 | TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS |
文件大小 |
275.88 Kbytes |
頁(yè)面數(shù)量 |
8 頁(yè) |
生產(chǎn)廠商 | Motorola, Inc |
企業(yè)簡(jiǎn)稱 |
Motorola【摩托羅拉】 |
中文名稱 | 加爾文制造公司官網(wǎng) |
原廠標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-3-10 10:22:00 |
人工找貨 | MTP75N06HD價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
MTP75N06HD規(guī)格書詳情
HDTMOS E-FET High Density Power FET
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
? Ultra Low RDS(on), High–Cell Density, HDTMOS
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Avalanche Energy Specified
產(chǎn)品屬性
- 型號(hào):
MTP75N06HD
- 制造商:
ON Semiconductor
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
- |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
24+ |
3800 |
詢價(jià) | |||||
ON |
23+ |
TO-220 |
6893 |
詢價(jià) | |||
MOTOROLA |
20+ |
TO-220 |
38900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
ONSEMI |
24+ |
N/A |
4577 |
原裝原裝原裝 |
詢價(jià) | ||
MOTOLA |
23+ |
2800 |
正品原裝貨價(jià)格低 |
詢價(jià) | |||
2022 |
TO |
1120 |
詢價(jià) | ||||
ON |
23+ |
TO220 |
10065 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
TI |
24+ |
SC70-5 |
11354 |
詢價(jià) | |||
MOTOROLA/摩托羅拉 |
17+ |
TO-220 |
31518 |
原裝正品 可含稅交易 |
詢價(jià) |