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MUR6080PT

60.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

MUR6080PT

Ultra Fast Recovery Diodes

FEATURES *InternationalstandardpackageJEDECTO-247AD *Planarpassivatedchips *Veryshortrecoverytime *Extremelylowswitchinglosses *LowIRM-values *Softrecoverybehaviour APPLICATIONS *Rectifiersinswitchmodepowersupplies(SMPS) *Uninterruptiblepowersupplies(UPS)

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MUR6080PT

Ultra Fast Recovery Diodes

SIRECTSirectifier Global Corp.

矽萊克半導(dǎo)體深圳市矽萊克半導(dǎo)體有限公司

MUR6080PT

Ultra Fast Recovery Diodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MUR6080PT_16

Ultra Fast Recovery Diodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

NCE6080

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080A

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6.5mΩ(typical)@VGS=10V RDS(ON)=7.5mΩ(typical)@VGS=4.5V ●Highdensityce

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080AI

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080AK

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6mΩ(typical)@VGS=10V RDS(ON)=7mΩ(typical)@VGS=4.5V ●Highdensitycell

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080AT

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

詳細(xì)參數(shù)

  • 型號：

    MUR6080PT

  • 制造商：

    SIRECTIFIER

  • 制造商全稱：

    Sirectifier Semiconductors

  • 功能描述：

    快速恢復(fù)二極管Fast Recovery Diodes，超快恢復(fù)二極管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。

供應(yīng)商型號品牌批號封裝庫存備注價格
SUNLED
24+
LEDDISPLAY
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
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IR
1738+
TO-220
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
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23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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IR
18+
TO-220
41200
原裝正品,現(xiàn)貨特價
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IR
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
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NS/國半
23+
MSOP8
69820
終端可以免費供樣,支持BOM配單!
 詢價
IR
23+
TO-220
10000
公司只做原裝正品
 詢價
IR
TO-220
22+
6000
十年配單,只做原裝
 詢價
IR
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價
更多MUR6080PT供應(yīng)商 更新時間2025-2-2 16:18:00

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