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MW6S010

RF Power Field Effect Transistor

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. ?TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MW6S010GMR1

RF Power Field Effect Transistor

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. ?TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MW6S010GNR1

RF Power Field Effect Transistor

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. ?TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MW6S010GNR1

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. ?TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MW6S010GNR1

RF Power Field Effect Transistors

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. ?TypicalTwo-TonePerformanceat960MHz:VDD=2

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MW6S010MR1

RF Power Field Effect Transistor

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. ?TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MW6S010N

RF Power Field Effect Transistors

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. ?TypicalTwo-TonePerformanceat960MHz:VDD=2

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MW6S010NR1

RF Power Field Effect Transistor

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. ?TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MW6S010NR1

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. ?TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MW6S010NR1

RF Power Field Effect Transistors

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. ?TypicalTwo-TonePerformanceat960MHz:VDD=2

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MW6S010GNR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MW6S010NR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MW6S010NR1_09

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MW6S010GNR1

包裝：托盤(pán) 封裝/外殼：TO-270BA 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET LDMOS 28V TO270-2 GULL

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

MW6S010MR1

包裝：卷帶（TR） 封裝/外殼：TO-270-2 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 68V 960MHZ TO-270-2

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

MW6S010NR1

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-270AA 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 68V 960MHZ TO270-2

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    MW6S010

  • 制造商：

    FREESCALE

  • 制造商全稱：

    Freescale Semiconductor, Inc

  • 功能描述：

    RF Power Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FREESCALE
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FSL
24+
SMD
2789
全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
FREESCALE
22+
NULL
116
全新原裝進(jìn)口,公司現(xiàn)貨!
 詢價(jià)
MOTOROLA
23+
高頻管
1520
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
Fairchild
24+
7500
詢價(jià)
FSL
24+
原廠原封
58000
絕對(duì)原裝現(xiàn)貨代理銷(xiāo)售
 詢價(jià)
Freescale
16+
TO-272GW
1500
原裝現(xiàn)貨假一罰十
 詢價(jià)
Freescale
2020+
TO-270
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
FREESCALE
2020+
TO270
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
 詢價(jià)
FREESCA
18+
TO-62
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
 詢價(jià)
更多MW6S010供應(yīng)商 更新時(shí)間2024-12-27 9:39:00

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