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MXR5160

RF TRANSISTOR PNP SILICON

Motorola

Motorola, Inc

NSL-5160

TO-18PhotocellsHermeticPackage

SILONEX

Luna Innovations Incorporated

NSL-5160

TO-18HermeticPhotocell

ADVANCEDPHOTONIXAdvanced Photonix, Inc.

advanced Photonix, Inc.

NTE5160A

NTE5111AthruNTE5166AZenerDiode,5Watt5Tolerance

Features: ●ZenerVoltage:3.3Vto200V ●HighSurgeCurrentCapability

NTE

NTE Electronics

PBSS5160DS

60V,1APNP/PNPlowVCEsat(BISS)transistor

Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorpairinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICand

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5160DS

60V,1APNPlowVCEsat(BISS)transistor

Generaldescription PNP/PNPlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5160DS

60V,1APNP/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5160K

60V,1APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT346(SC-59A)SurfaceMountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4160K. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM ■Highco

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5160K

60V,1APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinasmallSOT346(SC-59A)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4160K. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hi

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5160PAP

60V,1APNP/PNPlowVCEsat(BISS)transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5160PAP

60V,1APNP/PNPlowVCEsat(BISS)transistor

1.Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.NPN/NPNcomplement:PBSS4160PAN. 2.Featuresandbenefits ?Verylowcollec

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5160PAPS

60V,1APNP/PNPlowVCEsat(BISS)transistor

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5160QA

60V,1APNPlowVCEsat(BISS)transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5160QA

60V,1APNPlowVCEsat(BISS)transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. NPNcomplement:PBSS4160QA. 2.Featuresandbenefits ?Verylowcollector-

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5160T

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

PBSS5160T

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5160T

60V,1APNPlowVCEsat(BISS)transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS4160T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Highefficiency,reducesheatgeneration ?Reducesprinted-circuitboardarearequired ?

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5160T

60V,1APNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highefficiencyduetolessheatgeneration *ReducesPrinted-CircuitBoard(PCB)arearequired *Cost-effectivereplacementformediumpowertransistorsBCP52andBCX52

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5160T

TRANSISTOR(PNP)

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting LCDback-lighting Supplylineswitchingcircuits.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

PBSS5160U

60V,1APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaverysmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4160U. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MXR5160

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    RF TRANSISTOR PNP SILICON

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