PBSS5160DS中文資料飛利浦數據手冊PDF規(guī)格書

General description

PNP/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN complement: PBSS4160DS.

Features

■ Low collector-emitter saturation voltage VCEsat

■ High collector current capability: IC and ICM

■ High collector current gain (hFE) at high IC

■ High efficiency due to less heat generation

■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

■ Dual low power switches (e.g. motors, fans)

■ Automotive applications