首頁 >MZ2361>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

MZ2361

AXIAL LEAD DIODES

STABISTORSAlsoTightTolerance(AXIALLEADDIODES)

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MZ2361

MECHANICAL CHARACTERISTICS

DESCRIPTION/FEATURES □HermeticallySealedGlassPackages(DO-35) □HighReverseBreakdownandLowLeakage □ExcellentLowVoltageRegulation □ControlledStoredCharge □PlanarPassivatedDieElements APPLICATION Theseaxialleaddiodesrepresentconfigurationsofonetofour*p-njunctio

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

NTE2361

SiliconComplementaryTransistorsHighSpeedSwitch

HighSpeedSwitch Description: TheNTE2361(NPN)andNTE2362(PNP)complimentarysilicontransistorsaredesignedforgeneral–purposeamplifierandhighspeedswitchingapplications.Thehighgainofthesedevicesmakesitpossibleforthemtobedrivendirectlyfromintegratedcircuits.

NTE

NTE Electronics

PP2361

HeatShrinkTubing

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

RF2361

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

ProductDescription TheRF2361isalownoiseamplifierwithaveryhighdynamicrangedesignedfordigitalcellularapplications.Thedevicefunctionsasanoutstandingfrontendlownoiseamplifierorpoweramplifierdriveramplifierinthetransmitchainofdigitalsubscriberunitswherelowt

RFMD

RF Micro Devices

RF2361

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

RF2361

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

RF2361PCBA-D

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

RF2361PCBA-D

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

RF2361PCBA-D

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

ProductDescription TheRF2361isalownoiseamplifierwithaveryhighdynamicrangedesignedfordigitalcellularapplications.Thedevicefunctionsasanoutstandingfrontendlownoiseamplifierorpoweramplifierdriveramplifierinthetransmitchainofdigitalsubscriberunitswherelowt

RFMD

RF Micro Devices

RF2361PCBA-L

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

ProductDescription TheRF2361isalownoiseamplifierwithaveryhighdynamicrangedesignedfordigitalcellularapplications.Thedevicefunctionsasanoutstandingfrontendlownoiseamplifierorpoweramplifierdriveramplifierinthetransmitchainofdigitalsubscriberunitswherelowt

RFMD

RF Micro Devices

RF2361PCBA-L

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

RF2361PCBA-L

3VLOWNOISEAMPLIFIER/3VPADRIVERAMPLIFIER

RFMD

RF Micro Devices

SMG2361P

P-ChannelEnhancementMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SMG2361P

P-Channel60-V(D-S)MOSFET

FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?P-Channel ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SQ2361AEES

AutomotiveP-Channel30V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQ2361AEES

AutomotiveP-Channel60V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQ2361AEES

AutomotiveP-Channel80V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQ2361AEES

AutomotiveN-Channel40V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQ2361AEES

AutomotiveP-Channel40V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號：

    MZ2361

  • 制造商：

    MICROSEMI

  • 制造商全稱：

    Microsemi Corporation

  • 功能描述：

    AXIAL LEAD DIODES

供應(yīng)商型號品牌批號封裝庫存備注價格
SANKEW
20+
ZIP
36500
原裝現(xiàn)貨/放心購買
 詢價
繼電器
1736+
RELAY
8529
專營繼電器只做原裝正品假一賠十!
 詢價
高見澤TAKAMISAWA
24+
50000
全新原裝
 詢價
高見澤
23+
18840
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FUJITSU
20+
DIP
2890
只做原裝現(xiàn)貨繼電器
 詢價
2023+
DIP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
FUJITSU
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價
TAKAMISAWA
16+
原裝進口原廠原包接受訂貨
2866
原裝現(xiàn)貨假一罰十
 詢價
FUJITSU/富士通
22+
DIP-5
46000
鄭重承諾只做原裝進口貨
 詢價
FUJITSUTA
2018+
26976
代理原裝現(xiàn)貨/特價熱賣!
 詢價
更多MZ2361供應(yīng)商 更新時間2024-12-23 10:00:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多