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N0600N

MOS FIELD EFFECT TRANSISTOR

Description TheN0600NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)1=25m?MAX.(VGS=10V,ID=15A) ?RDS(on)2=36mΩMAX.(VGS=4.5V,ID=15A) ?Lowinputcapacitance ?Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0600N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

N0601N

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0601NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Hig

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0601N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

N0601N-ZK-E1-AY

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0601NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Hig

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0601N-ZK-E2-AY

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0601NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Hig

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0602N

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0602NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.6mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Hig

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0602N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

N0603N

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0603NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.6mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Highcurrent ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0603N

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0603NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.6mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Highcurrent ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0603N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

N0603N-S23

N-CHANNEL MOSFET FOR SWITCHING

Description TheN0603NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.6mΩMAX.(VGS=10V,ID=50A) ?Lowinputcapacitance Ciss=7730pFTYP.(VDS=25V,VGS=0V) ?Highcurrent ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0604N

N-channel MOSFET Low on-state resistance

Description TheN0604NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=6.5mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=4150pFTYP.(VDS=25V,VGS=0V) ?Highcurr

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0604N-S19-AY

N-channel MOSFET Low on-state resistance

Description TheN0604NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=6.5mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=4150pFTYP.(VDS=25V,VGS=0V) ?Highcurr

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0605N

N-channel MOSFET 60 V, 80 A, 8.5 mΩ

Features ?Lowon-stateresistance:RDS(on)=8.5mΩmax.(VGS=10V,ID=40A) ?LowCiss:Ciss=3300pFtyp.(VDS=25V) ?Highcurrent:ID(DC)=±80A ?RoHSCompliant ?QualityGrade:Standard ?Applications:Forhighcurrentswitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0605N-S19-AY

N-channel MOSFET 60 V, 80 A, 8.5 mΩ

Features ?Lowon-stateresistance:RDS(on)=8.5mΩmax.(VGS=10V,ID=40A) ?LowCiss:Ciss=3300pFtyp.(VDS=25V) ?Highcurrent:ID(DC)=±80A ?RoHSCompliant ?QualityGrade:Standard ?Applications:Forhighcurrentswitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0606N

N-channel MOSFET

Features ?Lowon-stateresistance:RDS(on)=12.9mΩmax.(VGS=10V,ID=30A) ?LowCiss:Ciss=2170pFtyp.(VDS=25V) ?Highcurrent:ID(DC)=±60A ?RoHSCompliant ?QualityGrade:Standard ?Applications:Forhighcurrentswitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0606N-S19-AY

N-channel MOSFET

Features ?Lowon-stateresistance:RDS(on)=12.9mΩmax.(VGS=10V,ID=30A) ?LowCiss:Ciss=2170pFtyp.(VDS=25V) ?Highcurrent:ID(DC)=±60A ?RoHSCompliant ?QualityGrade:Standard ?Applications:Forhighcurrentswitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0607N

N-channel MOSFET 60 V, 65 A, 8.4 mΩ

Features ?Lowon-stateresistance RDS(on)=8.4mΩmax.(VGS=10V,ID=32.5A) ?LowCiss:Ciss=3300pFtyp.(VDS=25V) ?Highcurrent:ID(DC)=±65A ?RoHSCompliant ?QualityGrade:Standard ?Applications:Forhighcurrentswitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

N0607N-ZK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=65A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    N06

  • 制造商：

    Renesas Electronics Corporation

  • 功能描述：

    Trans MOSFET N-CH 60V 30A Tube

  • 功能描述：

    SINGLE MOSFET, NCH, 60V, TO-220 - Tape and Reel

  • 功能描述：

    MOSFET N-CH 60V 30A TO-220

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NEXPERIA/安世
23+
SOT666
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
R
23+
TO-220
10000
公司只做原裝正品
 詢價(jià)
R
22+
TO-220
6000
十年配單,只做原裝
 詢價(jià)
R
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢價(jià)
NEC/RENESAS瑞薩
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
R
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
R
24+
TO-TO-220
37650
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
RENESAS/瑞薩
23+
TO-TO-220
19057
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
L3 Narda-MITEQ
24+
專注軍工級宇航級器件長期排單訂
600
詢價(jià)
RENESAS/瑞薩
1703+PB
TO252
445
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
更多N06供應(yīng)商 更新時(shí)間2025-1-6 11:01:00

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