NAND02GW3B集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

NAND02GW3B屬于集成電路（IC）的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的NAND02GW3B存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 8 Gbit memory array

– Up to 64Mbit spare area

– Cost effective solutions for mass storage

applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (2048 + 64 spare) Bytes

– x16 device: (1024 + 32 spare) Words

■ BLOCK SIZE

– x8 device: (128K + 4K spare) Bytes

– x16 device: (64K + 2K spare) Words

■ PAGE READ / PROGRAM

– Random access: 25μs (max)

– Sequential access: 50ns (min)

– Page program time: 300μs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ CACHE PROGRAM AND CACHE READ

MODES

– Internal Cache Register to improve the

program and read throughputs

■ FAST BLOCK ERASE

– Block erase time: 2ms (typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’

– for simple interface with microcontroller

■ AUTOMATIC PAGE 0 READ AT POWER-UP

– Boot from NAND support

■ SERIAL NUMBER OPTION

■ DATA PROTECTION

– Hardware and Software Block Locking

– Hardware Program/Erase locked during

Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant

with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and

hardware models

– Bad Blocks Management and Wear

Leveling algorithms

– PC Demo board with simulation software

– File System OS Native reference software

– Hardware simulation models