NCE40ER65BP

Marking：NCE40ER65BP；Package：TO-3P；650V, 40A, Trench FS III Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features ?TrenchFSIIITechnologyoffering ?VerylowVCE(sa

NCE40ER65BPF

Marking：NCE40ER65BPF；Package：TO-3PF；650V, 40A, Trench FS III Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features ?TrenchFSIIITechnologyoffering ?VerylowVCE(sa

NCE40ER65BT

Marking：NCE40ER65BT；Package：TO-247；650V, 40A, Trench FS III Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features ?TrenchFSIIITechnologyoffering ?VerylowVCE(sa

NCE40H10K

Marking：NCE40H10K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H10Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=40V,ID=100A RDS(ON)

NCE40H11

Marking：NCE40H11；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H11usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=110A RDS(ON)

NCE40H11K

Marking：NCE40H11K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H11Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=110A RDS(ON)

NCE40H12A

Marking：NCE40H12A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H12Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=120A RDS(ON)

NCE40H14

Marking：NCE40H14；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H14usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=140A RDS(ON)

NCE40H25LL

Marking：NCE40H25LL；Package：TOLL；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H25LLusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply

NCE40H29D

Marking：NCE40H29D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H29Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=290A RDS(ON)